SCHEMBL17052467

SCHEMBL17052467

CCC(C)(C)C(=O)OC12CC3CC(C1)CC(OS(C)(=O)=O)(C3)C2

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
DPP8 Q6V1X1 2/20 0.33
DPP9 Q86TI2 2/20 0.33
CYP17A1 P05093 1/20 0.33
CYP19A1 P11511 1/20 0.33
DPP4 P27487 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17052472 0.91
SCHEMBL17052468 0.90 DPP8 (0.33) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL2601709 0.88 DPP8 (0.32) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL12202186 0.86 DPP8 (0.32) DPP8DPP9CYP17A1CYP19A1
SCHEMBL12202170 0.86 DPP8 (0.35) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL14802697 0.83 CYP17A1 (0.35) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL2741143 0.83 TSHR (0.37) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL15905714 0.83 CYP17A1 (0.35) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL13563627 0.83 CYP17A1 (0.35) DPP8DPP9CYP17A1CYP19A1DPP4
SCHEMBL2625704 0.83 DPP4 (0.40) DPP8DPP9CYP17A1CYP19A1DPP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9618850-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-20160202612-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-07-14 US disclosed
US-20160139512-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-19 US disclosed
US-20160124313-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-20150248054-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-03 US disclosed