Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.36 |
| ▸ | HBB | P68871 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11417676 | 0.81 | TP53 (0.39) | TP53HBBSMN1; SMN2 | |
| SCHEMBL2300090 | 0.79 | TP53 (0.42) | TP53HBBSMN1; SMN2 | |
| SCHEMBL11599581 | 0.78 | TP53 (0.37) | TP53HBBSMN1; SMN2 | |
| SCHEMBL1713983 | 0.77 | TP53 (0.41) | TP53HBBSMN1; SMN2 | |
| SCHEMBL2334930 | 0.77 | TP53 (0.41) | TP53HBBSMN1; SMN2 | |
| SCHEMBL10947307 | 0.77 | ALDH1A1 (0.42) | TP53HBBSMN1; SMN2 | |
| SCHEMBL25992961 | 0.77 | TP53 (0.36) | TP53HBBSMN1; SMN2 | |
| SCHEMBL10953768 | 0.76 | ALDH1A1 (0.45) | TP53HBBSMN1; SMN2 | |
| SCHEMBL11763027 | 0.74 | TP53 (0.38) | TP53HBBSMN1; SMN2 | |
| SCHEMBL1714884 | 0.74 | SMN1; SMN2 (0.38) | TP53HBBSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230103242-A1 | METHOD FOR PRODUCING POLYMER | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-30 | — | — | US | disclosed |
| CN-114746468-A | Method for producing polymer | 日产化学株式会社 | 2022-07-12 | — | — | CN | disclosed |
| WO-2021111976-A1 | METHOD FOR PRODUCING POLYMER | 日産化学株式会社 | 2021-06-10 | — | — | WO | disclosed |
| CN-103649835-B | The composition of formation EUV lithography resist lower membrane with condensation based polymer | 日产化学工业株式会社 | 2018-02-06 | — | — | CN | disclosed |
| US-9240327-B2 | Resist underlayer film-forming composition for EUV lithography containing condensation polymer | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-01-19 | — | — | US | disclosed |
| US-20140170567-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-06-19 | — | — | US | disclosed |
| EP-1757986-B1 | ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN | NISSAN CHEMICAL IND LTD (JP) | 2014-05-14 | — | — | EP | disclosed |
| CN-103649835-A | Resist underlayer film-forming composition for EUV lithography containing condensation polymer | NISSAN CHEMICAL IND LTD | 2014-03-19 | — | — | CN | disclosed |
| CN-101523292-B | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSAN CHEMICAL IND LTD | 2013-04-10 | — | — | CN | disclosed |
| EP-2085823-B1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | NISSAN CHEMICAL IND LTD (JP) | 2013-01-16 | — | — | EP | disclosed |
| CN-101523292-A | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSAN CHEMICAL IND LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| EP-2085823-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | Nissan Chemical Industries, Ltd. (JP) | 2009-08-05 | — | — | EP | disclosed |
| US-20080268379-A1 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| CN-101160549-A | Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography | NISSAN CHEMICAL IND LTD (JP) | 2008-04-09 | — | — | CN | disclosed |
| US-20080038678-A1 | Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| EP-1876495-A1 | COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2008-01-09 | — | — | EP | disclosed |
| CN-101052919-A | Sulfonate-containing composition for forming anti-reflective coating for lithography | NISSAN CHEMICAL IND LTD (JP) | 2007-10-10 | — | — | CN | disclosed |
| EP-1813987-A1 | SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2007-08-01 | — | — | EP | disclosed |
| CN-1965268-A | Antireflection film for semiconductor containing condensation type polymer | NISSAN CHEMICAL IND LTD (JP) | 2007-05-16 | — | — | CN | disclosed |
| EP-1757986-A1 | ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER | Nissan Chemical Industries, Ltd. (JP) | 2007-02-28 | — | — | EP | disclosed |