⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL18492878 | 0.97 | — | — | |
| SCHEMBL126692 | 0.74 | — | — | |
| SCHEMBL7084623 | 0.74 | ALDH1A1 (0.35) | — | |
| SCHEMBL603943 | 0.74 | — | — | |
| SCHEMBL635740 | 0.73 | — | — | |
| SCHEMBL1061677 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL10866624 | 0.71 | — | — | |
| SCHEMBL10799064 | 0.71 | — | — | |
| SCHEMBL15201672 | 0.69 | — | — | |
| SCHEMBL15201673 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10073351-B2 | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation | VERSUM MATERIALS US, LLC (US) | 2018-09-11 | — | — | US | claimed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | claimed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| CN-101398639-A | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-04-01 | — | — | CN | claimed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | claimed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | claimed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | claimed |
| CN-105419488-B | A kind of agranular type silver base conductive ink and preparation method and application | 山东省科学院新材料研究所 | 2018-05-11 | — | — | CN | disclosed |
| CN-105419488-A | Agranular type silver-based conductive ink and preparation method therefor and application thereof | NEW MAT RES INST OF SHANDONG ACAD OF SCIENCES | 2016-03-23 | — | — | CN | disclosed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-6815150-B2 | MIXTURE OF ALKANOLAMINE, SOLVENT, PHOSPHOROUS COMPOUND, OXYACID AND WATER | SHARP KABUSHIKI KAISHA (JP) | 2004-11-09 | — | — | US | disclosed |
| US-20040048761-A1 | Cleaning composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-03-11 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| US-20030152874-A1 | Photoresist stripping composition and process for stripping resist | MITSUBISHI GAS CHEMICAL COMPANY INC. (JP) | 2003-08-14 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |