SCHEMBL1741291

SCHEMBL1741291

CCNC(CC)CNCC(C)O

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.38
LMNA P02545 2/20 0.33
KDM4E B2RXH2 2/20 0.33
CNR1 P21554 1/20 0.33
ADRA1A P35348 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
ABCC3 O15438 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
SLC6A4 P31645 2/20 0.31
ALDH1A1 P00352 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2D6 P10635 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1741198 0.80 TSHR (0.39) TSHRLMNAKDM4ECNR1ADRA1A
SCHEMBL331674 0.79 TP53 (0.37) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1740523 0.77 TSHR (0.35) TSHRKDM4EALDH1A1CYP1A2CYP2D6
Diisopropanolamine SCHEMBL10618901 0.75
Diisopropanolamine SCHEMBL22774 0.75
SCHEMBL1741392 0.74 LMNA (0.43) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL7207274 0.74 TSHR (0.47) TSHRLMNAKDM4ECNR1ADRA1A
SCHEMBL167366 0.73
SCHEMBL468958 0.73
SCHEMBL2014569 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2389612-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ Electronic Materials USA Corp. (US) 2011-11-30 EP claimed
WO-2010084372-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-07-29 WO claimed
US-20100183851-A1 Photoresist Image-forming Process Using Double Patterning CAO YI 2010-07-22 US claimed
EP-2146250-B1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND PROCESS FOR THE FORMATION OF MICROPATTERNS WITH THE SAME MERCK PATENT GMBH (DE) 2017-08-23 EP disclosed
EP-2389612-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ Electronic Materials USA Corp. (US) 2011-11-30 EP disclosed
WO-2010084372-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-07-29 WO disclosed
US-20100183851-A1 Photoresist Image-forming Process Using Double Patterning CAO YI 2010-07-22 US disclosed
US-20100119717-A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND METHOD FOR THE FORMATION OF MICROPATTERNS WITH THE SAME HONG SUNG-EUN 2010-05-13 US disclosed
EP-2146250-A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND PROCESS FOR THE FORMATION OF MICROPATTERNS WITH THE SAME AZ Electronic Materials (Japan) K.K. (JP) 2010-01-20 EP disclosed