SCHEMBL17428488

SCHEMBL17428488

CC(=NOS(C)(=O)=O)c1cccc(-c2ccccc2)c1

nearest known ligand 0.56

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PPARG P37231 1/20 0.49
PPARA Q07869 1/20 0.49
KMO O15229 1/20 0.45
MAPT P10636 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
LMNA P02545 2/20 0.42
GAA P10253 1/20 0.42
HTR1A P08908 1/20 0.42
ADORA3 P0DMS8 1/20 0.42
CCKAR P32238 1/20 0.42
HTR5A P47898 1/20 0.42
HDAC8 Q9BY41 1/20 0.41
KAT6A Q92794 1/20 0.40
MAPK1 P28482 1/20 0.40
HTT P42858 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
PRSS1 P07477 1/20 0.40
PRSS2 P07478 1/20 0.40
PRSS3 P35030 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10183468 0.86 SMN1; SMN2 (0.49) PPARGPPARAMAPTLMNAMAPK1
SCHEMBL10182711 0.86 SMN1; SMN2 (0.49) PPARGPPARAMAPTLMNAMAPK1
SCHEMBL10183467 0.78 TDP1 (0.42) PPARGPPARAMAPTTDP1LMNA
SCHEMBL12551383 0.78 PPARG (0.42) PPARGPPARAKMOMAPTTDP1
SCHEMBL30098733 0.77 PPARG (0.46) PPARGPPARAMAPTLMNAGAA
SCHEMBL5037131 0.75 PPARG (0.64) PPARGPPARAKMOLMNAMAPK1
SCHEMBL10182707 0.74 MAPT (0.46) MAPTLMNAMAPK1HTTL3MBTL1
SCHEMBL8686093 0.74 PPARG (0.47) PPARGPPARAKMOMAPTTDP1
SCHEMBL4327798 0.73 KMO (0.52) PPARGPPARAKMOMAPTTDP1
SCHEMBL8310029 0.73 KMO (0.52) PPARGPPARAKMOMAPTTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed