SCHEMBL1742979

SCHEMBL1742979

CCC(CO)NCC(C)N

nearest known ligand 0.56

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.56
KDM4E B2RXH2 2/20 0.56
CNR1 P21554 1/20 0.56
ADRA1A P35348 1/20 0.56
TDP1 Q9NUW8 1/20 0.56
ABCC3 O15438 1/20 0.54
SMN1; SMN2 Q16637 1/20 0.54
ALDH1A1 P00352 2/20 0.36
GAA P10253 1/20 0.31
ALOX12 P18054 1/20 0.30
TRPV3 Q8NET8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1743063 0.82 LMNA (0.56) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL24138226 0.81 LMNA (0.61) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL14037259 0.81 LMNA (0.61) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1741298 0.76 LMNA (0.54) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1742791 0.76 LMNA (0.54) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1742998 0.74 LMNA (0.58) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL20988158 0.74 LMNA (0.46) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1740536 0.74 LMNA (0.58) LMNAKDM4ECNR1ADRA1ATDP1
SCHEMBL1740524 0.73
SCHEMBL16549769 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102272675-A A photoresist image-forming process using double patterning 2011-12-07 CN claimed
EP-2389612-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ Electronic Materials USA Corp. (US) 2011-11-30 EP claimed
WO-2010084372-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-07-29 WO claimed
US-20100183851-A1 Photoresist Image-forming Process Using Double Patterning CAO YI 2010-07-22 US claimed
EP-2146250-B1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND PROCESS FOR THE FORMATION OF MICROPATTERNS WITH THE SAME MERCK PATENT GMBH (DE) 2017-08-23 EP disclosed
CN-101675390-B Water-soluble resin composition for the formation of micropatterns and process for the formation of micropatterns with the same AZ ELECTRONIC MATERIALS JAPAN 2012-07-18 CN disclosed
CN-102272675-A A photoresist image-forming process using double patterning 2011-12-07 CN disclosed
EP-2389612-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ Electronic Materials USA Corp. (US) 2011-11-30 EP disclosed
WO-2010084372-A1 A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-07-29 WO disclosed
US-20100183851-A1 Photoresist Image-forming Process Using Double Patterning CAO YI 2010-07-22 US disclosed
US-20100119717-A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND METHOD FOR THE FORMATION OF MICROPATTERNS WITH THE SAME HONG SUNG-EUN 2010-05-13 US disclosed
CN-101675390-A Water-soluble resin composition for the formation of micropatterns and process for the formation of micropatterns with the same AZ ELECTRONIC MATERIALS JAPAN 2010-03-17 CN disclosed
EP-2146250-A1 WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND PROCESS FOR THE FORMATION OF MICROPATTERNS WITH THE SAME AZ Electronic Materials (Japan) K.K. (JP) 2010-01-20 EP disclosed