⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL409596 | 0.67 | — | — | |
| SCHEMBL216231 | 0.67 | — | — | |
| SCHEMBL8162371 | 0.67 | — | — | |
| SCHEMBL1053159 | 0.65 | — | — | |
| Hydrochloric Acid SCHEMBL2159369 | 0.65 | — | — | |
| SCHEMBL15541840 | 0.65 | — | — | |
| SCHEMBL9705999 | 0.65 | — | — | |
| SCHEMBL7263423 | 0.65 | — | — | |
| SCHEMBL9299246 | 0.65 | — | — | |
| SCHEMBL1305709 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11424253-B2 | Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof | NAMLAB GGMBH (DE) | 2022-08-23 | — | — | US | disclosed |
| US-20180151577-A1 | DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELECTRIC MATERIAL AND METHOD FOR THE FORMATION THEREOF | FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAN DTEN FORSCHUNG E.V. (DE) | 2018-05-31 | — | — | US | disclosed |
| US-9966466-B2 | Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof | GLOBALFOUNDRIES INC. (KY) | 2018-05-08 | — | — | US | disclosed |
| US-20180040731-A1 | SEMICONDUCTOR-ON-INSULATOR WAFER, SEMICONDUCTOR STRUCTURE INCLUDING A TRANSISTOR, AND METHODS FOR THE FORMATION AND OPERATION THEREOF | GLOBALFOUNDRIES U.S. INC. | 2018-02-08 | — | — | US | disclosed |
| US-9865608-B2 | Method of forming a device including a floating gate electrode and a layer of ferroelectric material | GLOBALFOUNDRIES INC. (KY) | 2018-01-09 | — | — | US | disclosed |
| US-20160268271-A1 | METHOD OF FORMING A DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELECTRIC MATERIAL | GLOBALFOUNDRIES U.S. INC. | 2016-09-15 | — | — | US | disclosed |
| US-20160071947-A1 | METHOD INCLUDING A REPLACEMENT OF A DUMMY GATE STRUCTURE WITH A GATE STRUCTURE INCLUDING A FERROELECTRIC MATERIAL | GLOBALFOUNDRIES U.S. INC. | 2016-03-10 | — | — | US | disclosed |
| US-20160064510-A1 | DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELECTRIC MATERIAL AND METHOD FOR THE FORMATION THEREOF | GLOBALFOUNDRIES U.S. INC. | 2016-03-03 | — | — | US | disclosed |