SCHEMBL175666

SCHEMBL175666

[B].[P]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3703749 0.82
SCHEMBL137481 0.82
SCHEMBL6688448 0.82
SCHEMBL3264089 0.82
SCHEMBL5713392 0.82
SCHEMBL373749 0.82
SCHEMBL5540304 0.82
SCHEMBL7167214 0.82
SCHEMBL3316746 0.82
SCHEMBL6892939 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2866 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122035873-A Method for removing trace boron and phosphorus impurities in trichlorosilane 华东理工大学 2026-05-15 CN claimed
US-20260060086-A1 COOLING APPARATUS, SEMICONDUCTOR DEVICE INCLUDING THE APPARATUS, AND MANUFACTURING METHOD THEROF KOOLMICRO INC (KR) 2026-02-26 US claimed
US-20250352981-A1 PHOSPHOROUS BORON-BONDED COMPOUNDS FOR CAPTURING, STORING AND/OR UTILIZING CARBON DIOXIDE AND RELATED PRODUCTS COMPOSITIONS METHODS AND SYSTEMS CALIFORNIA INST OF TECHN (US) 2025-11-20 US claimed
EP-4629779-A1 FUNCTIONAL POLYCRYSTALLINE SILICON TUNNEL OXIDE PASSIVATED CONTACT STRUCTURE AND PREPARATION METHOD THEREFOR Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CN) 2025-10-08 EP claimed
EP-4615201-A1 SURFACE COMPOSITE FILM STRUCTURE CAPABLE OF CUT-OFF LONGITUDINAL TRANSPORT AND CONDUCTED LATERAL TRANSPORT, PREPARATION METHOD THEREFOR AND USE THEREOF Teranergy Technology Co., Ltd. (CN) 2025-09-10 EP claimed
US-20250275292-A1 SURFACE COMPOSITE FILM STRUCTURE WITH LONGITUDINAL TRANSMISSION CUTOFF AND TRANSVERSE TRANSMISSION CONDUCTION, AND PREPARATION METHOD AND APPLICATION THEREOF Teranergy Technology Co., Ltd. (CN) 2025-08-28 US claimed
CN-119954865-A DOPO phosphorus boron durable flame retardant and preparation method thereof 青岛琴达诚科技有限公司 2025-05-09 CN claimed
CN-116240024-B Etching solution for etching silicon dioxide with high selectivity relative to doped polysilicon 湖北兴福电子材料股份有限公司 2025-03-28 CN claimed
WO-2025049387-A2 ETCHING COMPOSITIONS FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-03-06 WO claimed
CN-113745106-B Method for removing front-side winding plating of N-type TOPCon battery 英利能源(中国)有限公司 2025-03-04 CN claimed
EP-0714136-A1 Heterojunction type or Schottky-barrier type semiconductor element and solar cell RESEARCH DEVELOPMENT CORPORATION OF JAPAN (JP) 1996-05-29 EP claimed
EP-0703898-A1 IMPROVED ZEOLITE ZK-5 CATALYST FOR CONVERSION OF METHANOL AND AMMONIA TO MONOMETHYLAMINE AND DIMETHYLAMINE E.I. DU PONT DE NEMOURS AND COMPANY (US) 1996-04-03 EP claimed
US-5488009-A Post-titanium nitride mask ROM programming method UNITED MICROELECTRONICS CORPORATION (TW) 1996-01-30 US claimed
US-5461281-A Corrosion resistance PATENT-TREUHAND-GESELLSCHAFT F. ELEKTRISCHE GLUEHLAMPEN MBH (DE) 1995-10-24 US claimed
US-5405804-A Method of manufacturing a semiconductor device by laser annealing a metal layer through an insulator KABUSHIKI KAISHA TOSHIBA (JP) 1995-04-11 US claimed
WO-1994029265-A1 IMPROVED ZEOLITE ZK-5 CATALYST FOR CONVERSION OF METHANOL AND AMMONIA TO MONOMETHYLAMINE AND DIMETHYLAMINE E.I. DU PONT DE NEMOURS AND COMPANY (US) 1994-12-22 WO claimed
WO-1993003500-A1 METHOD OF FORMING A RESISTIVE ELEMENT IN A SEMICONDUCTOR DEVICE AND A SRAM CELL MADE THEREBY SIERRA SEMICONDUCTOR CORPORATION (US) 1993-02-18 WO claimed
US-5156775-A Flame retardant compositions BLOUNT DAVID H (US) 1992-10-20 US claimed
US-5132093-A SYNERGISTIC CORROSION INHIBITORS BASED ON SUBSTITUTED PYRIDINIUM COMPOUNDS SRI INTERNATIONAL (US) 1992-07-21 US claimed
US-4293370-A Method for the epitaxial growth of boron phosphorous semiconductors TDK ELECTRONICS CO., LTD. (JP) 1981-10-06 US claimed