SCHEMBL1763876

SCHEMBL1763876

FC(F)=C(F)C(F)(F)C(F)=C(F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1763874 1.00
SCHEMBL88862 0.86
SCHEMBL776976 0.78
SCHEMBL18675 0.78
SCHEMBL2836890 0.78
SCHEMBL2464884 0.78
SCHEMBL333324 0.78
SCHEMBL105368 0.78
SCHEMBL6230404 0.74
SCHEMBL7638217 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250343048-A1 ETCHING METHOD RESONAC CORPORATION (JP) 2025-11-06 US disclosed
EP-4481794-A1 ETCHING METHOD Resonac Corporation (JP) 2024-12-25 EP disclosed
CN-118679554-A Etching method 株式会社力森诺科 2024-09-20 CN disclosed
WO-2023157441-A1 ETCHING METHOD 株式会社レゾナック 2023-08-24 WO disclosed
US-8547011-B2 Layered product, luminescence device and use thereof ZEON CORPORATION (JP) 2013-10-01 US disclosed
EP-1745922-B1 MULTILAYER BODY, LIGHT-EMITTING DEVICE AND USE THEREOF ZEON CORP (JP) 2012-08-29 EP disclosed
EP-1867413-B1 PROTECTIVE GAS FOR METAL PRODUCTION CENTRAL GLASS CO LTD (JP) 2012-08-22 EP disclosed
EP-1655772-B1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD TOKYO ELECTRON LTD (JP) 2011-09-28 EP disclosed
US-20110124928-A1 Gas production facility, gas supply container, and gas for manufacture of electronic devices ZEON CORPORATION (JP) 2011-05-26 US disclosed
US-7704893-B2 Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD TOKYO EECTRON LIMITED (JP) 2010-04-27 US disclosed
US-7252886-B2 Curable composition and process for producing cured fluorinated product ASAHI GLASS COMPANY, LIMITED (JP) 2007-08-07 US disclosed
US-20070020951-A1 Fluorocarbon film and method for forming same ZEON CORPORATION (JP) 2007-01-25 US disclosed
EP-1745922-A1 MULTILAYER BODY, LIGHT-EMITTING DEVICE AND USE THEREOF ZEON CORPORATION (JP) 2007-01-24 EP disclosed
EP-1744092-A1 APPARATUS FOR PRODUCING GAS, VESSEL FOR SUPPLYING GAS AND GAS FOR USE IN MANUFACTURING ELECTRONIC DEVICE OHMI, Tadahiro (JP) 2007-01-17 EP disclosed
US-20060281883-A1 Curable composition and process for producing cured fluorinated product ASAHI GLASS COMPANY LIMITED (JP) 2006-12-14 US disclosed
US-20060264059-A1 Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd ZEON CORPORATION (JP) 2006-11-23 US disclosed
EP-1655772-A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD TOKYO ELECTRON LIMITED (JP) 2006-05-10 EP disclosed
US-20050247670-A1 Method of dry etching, dry etching gas and process for producing perfluoro-2-pentyne ZEON CORPORATION (JP) 2005-11-10 US disclosed
CN-1669129-A Dry etching method, dry etching gas, and method for producing perfluoro-2-pentyne ZEON CORP (JP) 2005-09-14 CN disclosed
EP-1542268-A1 METHOD OF DRY ETCHING, DRY ETCHING GAS AND PROCESS FOR PRODUCING PERFLUORO-2-PENTYNE Zeon Corporation (JP) 2005-06-15 EP disclosed