⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15153822 | 0.87 | — | — | |
| SCHEMBL11734992 | 0.87 | — | — | |
| SCHEMBL2982904 | 0.87 | — | — | |
| SCHEMBL7621984 | 0.71 | — | — | |
| SCHEMBL9565122 | 0.71 | — | — | |
| SCHEMBL2679973 | 0.71 | — | — | |
| SCHEMBL139003 | 0.71 | — | — | |
| SCHEMBL16274558 | 0.71 | — | — | |
| SCHEMBL35987 | 0.71 | — | — | |
| SCHEMBL72754 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115305472-A | Etching solution composition and etching method using same | 达兴材料股份有限公司 | 2022-11-08 | — | — | CN | disclosed |
| CN-110396693-B | Etching liquid composition, etching method using same, and method for producing display device or semiconductor containing IGZO | 达兴材料股份有限公司 | 2021-08-10 | — | — | CN | disclosed |
| CN-107227462-B | Alkaline etching solution composition and etching method using same | 达兴材料股份有限公司 | 2021-03-09 | — | — | CN | disclosed |
| CN-111455388-A | Acidic aqueous hydrogen peroxide composition | 达兴材料股份有限公司 | 2020-07-28 | — | — | CN | disclosed |
| CN-110396693-A | Etchant and engraving method and manufacture display device or method for semiconductor containing IGZO using it | DAXIN MATERIALS CORP | 2019-11-01 | — | — | CN | disclosed |
| CN-106460197-B | Etching solution and etching concentrated solution for multilayer film and etching method | 松下知识产权经营株式会社 | 2019-02-22 | — | — | CN | disclosed |
| CN-107227462-A | Alkaline etching solution composition and etching method using same | 达兴材料股份有限公司 | 2017-10-03 | — | — | CN | disclosed |
| CN-106929853-A | Etching solution composition and etching method using same | 达兴材料股份有限公司 | 2017-07-07 | — | — | CN | disclosed |
| CN-105765107-A | Multilayer-film etchant, concentrated etchant, and etching method | 松下知识产权经营株式会社 | 2016-07-13 | — | — | CN | disclosed |
| CN-104611701-A | Etching solution composition and etching method | DAXIN MATERIALS CORP | 2015-05-13 | — | — | CN | disclosed |
| CN-104611700-A | Etching solution composition and etching method | DAXIN MATERIALS CORP | 2015-05-13 | — | — | CN | disclosed |
| US-7943519-B2 | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-05-17 | — | — | US | disclosed |
| US-7943519-B2 | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-05-17 | — | — | US | disclosed |
| CN-1884618-B | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO LTD | 2011-04-06 | — | — | CN | disclosed |
| CN-1884618-B | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO LTD | 2011-04-06 | — | — | CN | disclosed |
| JP-2007005790-A | ETCHANT, METHOD FOR FORMING WIRING USING THIS, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE | SAMSUNG ELECTRONICS CO LTD | 2007-01-11 | — | — | JP | disclosed |
| US-20060292888-A1 | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO., LTD. | 2006-12-28 | — | — | US | disclosed |
| US-20060292888-A1 | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO., LTD. | 2006-12-28 | — | — | US | disclosed |
| CN-1884618-A | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-12-27 | — | — | CN | disclosed |
| CN-1884618-A | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-12-27 | — | — | CN | disclosed |