⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9565122 | 1.00 | — | — | |
| SCHEMBL1802031 | 0.82 | — | — | |
| SCHEMBL2982904 | 0.82 | — | — | |
| SCHEMBL570004 | 0.82 | — | — | |
| SCHEMBL2454717 | 0.82 | — | — | |
| SCHEMBL668727 | 0.82 | — | — | |
| SCHEMBL15153822 | 0.82 | — | — | |
| SCHEMBL16858619 | 0.82 | — | — | |
| SCHEMBL6301067 | 0.82 | — | — | |
| SCHEMBL611428 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2327 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112714869-B | Nanopore sequencing device including ruthenium-containing electrode | 豪夫迈·罗氏有限公司 | 2024-06-18 | — | — | CN | claimed |
| CN-114068710-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2024-06-18 | — | — | CN | claimed |
| US-11988625-B2 | Capacitive biosensor and fabricating method thereof | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 2024-05-21 | — | — | US | claimed |
| US-11971656-B2 | Method for manufacturing a membrane assembly | ASML NETHERLANDS B.V. (NL) | 2024-04-30 | — | — | US | claimed |
| CN-110998808-B | Semiconductor device and method for manufacturing semiconductor device | 株式会社半导体能源研究所 | 2024-04-30 | — | — | CN | claimed |
| US-11963468-B2 | Rram structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-16 | — | — | US | claimed |
| CN-117810163-A | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2024-04-02 | — | — | CN | claimed |
| US-20240103355-A1 | REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | HOYA CORPORATION (JP) | 2024-03-28 | — | — | US | claimed |
| US-20240105707-A1 | Semiconductor Structures And Methods Of Forming The Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-28 | — | — | US | claimed |
| CN-117615582-A | Data storage structure, method of manufacturing the same, and semiconductor device including the same | 三星电子株式会社 | 2024-02-27 | — | — | CN | claimed |
| EP-0618597-B1 | Lightly donor doped electrodes for high-dielectric-constant materials | TEXAS INSTRUMENTS INC (US) | 1997-07-16 | — | — | EP | claimed |
| US-5612574-A | Semiconductor structures using high-dielectric-constant materials and an adhesion layer | TEXAS INSTRUMENTS INCORPORATED (US) | 1997-03-18 | — | — | US | claimed |
| US-5605858-A | MINIMIZING THE CRACKS BY SHAPING THE TOP SURFACE TO ROUND CORNER | TEXAS INSTRUMENTS INCORPORATED (US) | 1997-02-25 | — | — | US | claimed |
| US-5573979-A | Sloped storage node for a 3-D dram cell structure | TEXAS INSTRUMENTS INCORPORATED (US) | 1996-11-12 | — | — | US | claimed |
| EP-0726600-A2 | Method of forming a structure for DRAM and structure formed thereby | TEXAS INSTRUMENTS INCORPORATED (US) | 1996-08-14 | — | — | EP | claimed |
| US-5489548-A | FORMING SUPPORTING, ADHESION, UNREACTIVE LAYERS, VAPOR DEPOSITING CONFORMAL LAYER, ANISOTROPICALLY ETCHING CONFORMAL LAYER TO FORM CONDUCTIVE SIDEWALL, DEPOSITING HIGH DIELECTRIC CONSTANT MATERIAL LAYER, FINALLY ELECTRODE | TEXAS INSTRUMENTS INCORPORATED (US) | 1996-02-06 | — | — | US | claimed |
| US-5471364-A | Multilayer; forming thin dielectric buffer, high dielectric constant and another thin dielectric buffer layers of leakage-curent-density materials; multilayer capacitors | TEXAS INSTRUMENTS INCORPORATED (US) | 1995-11-28 | — | — | US | claimed |
| EP-0618598-A1 | Improved electrode interface for high-dielectric-constant materials | TEXAS INSTRUMENTS INCORPORATED (US) | 1994-10-05 | — | — | EP | claimed |
| EP-0618597-A1 | Lightly donor doped electrodes for high-dielectric-constant materials | TEXAS INSTRUMENTS INCORPORATED (US) | 1994-10-05 | — | — | EP | claimed |
| EP-0567062-A1 | Electrical connections to dielectric materials | TEXAS INSTRUMENTS INCORPORATED (US) | 1993-10-27 | — | — | EP | claimed |