SCHEMBL17789907

SCHEMBL17789907

COC(C)OC(C)c1ccc(C(=O)O)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.47
CA1 P00915 3/20 0.47
CA2 P00918 3/20 0.47
ALDH1A1 P00352 1/20 0.47
SMN1; SMN2 Q16637 1/20 0.47
TP53 P04637 1/20 0.44
TSHR P16473 1/20 0.44
RXRA P19793 5/20 0.44
RXRB P28702 3/20 0.44
SRD5A2 P31213 3/20 0.42
MAPK1 P28482 1/20 0.41
ANPEP P15144 1/20 0.41
NR1H4 Q96RI1 1/20 0.41
RXRG P48443 1/20 0.40
AKR1C2 P52895 1/20 0.40
AKR1C1 Q04828 1/20 0.40
MAPT P10636 1/20 0.40
CA12 O43570 2/20 0.39
CA4 P22748 2/20 0.39
CA6 P23280 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6467238 0.86 CA1 (0.52) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL14966540 0.85 KMT2A (0.55) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL17789904 0.84 TDP1 (0.55) KMT2ACA1CA2ALDH1A1TSHR
SCHEMBL10519895 0.81 AKR1C2 (0.57) KMT2ACA1CA2TP53TSHR
SCHEMBL17789900 0.78 CA12 (0.43) CA1CA2TSHRMAPTCA12
SCHEMBL31541675 0.78 KMT2A (0.47) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL3075291 0.77 KMT2A (0.50) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL7658930 0.77 KMT2A (0.71) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL3075285 0.77 KMT2A (0.50) KMT2ACA1CA2ALDH1A1SMN1; SMN2
SCHEMBL792181 0.76 CA1 (0.54) KMT2ACA1CA2ALDH1A1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9798242-B2 Rinse solution for pattern formation and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-24 US disclosed
US-9632416-B2 Rinse solution for pattern formation and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-20160154312-A1 RINSE SOLUTION FOR PATTERN FORMATION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-02 US disclosed
US-20160154314-A1 RINSE SOLUTION FOR PATTERN FORMATION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-02 US disclosed