SCHEMBL17819149

SCHEMBL17819149

CCCS(=O)(=O)O.[NaH].[NaH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL659205 1.00
Ammonia Solution, Strong SCHEMBL28164274 0.97
Water SCHEMBL60895 0.97
SCHEMBL28849565 0.97 LMNA (0.47)
SCHEMBL5268 0.97
SCHEMBL22418727 0.94 PTGS1 (0.48)
Butane SCHEMBL25220481 0.93 LMNA (0.45)
SCHEMBL20533646 0.93
SCHEMBL21859089 0.93
SCHEMBL22581628 0.93

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117385426-A Electrodeposition of copper in microelectronic devices 麦克德米德乐思公司 2024-01-12 CN claimed
CN-115074789-B Circuit board blind hole rapid filling electrolytic copper plating solution and rapid filling method 深圳市板明科技股份有限公司 2022-11-25 CN claimed
CN-115074789-A Circuit board blind hole rapid filling electrolytic copper plating solution and rapid filling method 深圳市板明科技股份有限公司 2022-09-20 CN claimed
WO-2020057325-A1 DETECTION METHOD AND SENSOR FOR L-CYSTEINE BASED ON 3,3'-DITHIOBIS(1-PROPANESULFONIC ACID)-MERCURY COMPOSITE FILM 长沙理工大学 2020-03-26 WO claimed
US-20160190007-A1 A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-30 US claimed
US-20160168738-A1 Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-16 US claimed
CN-101421106-B Copper electroplating of printing cylinders and copper deposition method MACDERMID INC 2010-08-11 CN claimed
CN-101421106-A Copper electroplating of printing cylinders MACDERMID INC (US) 2009-04-29 CN claimed
CN-115734982-A Dielectric film-forming composition 富士胶片电子材料美国有限公司 2023-03-03 CN disclosed
CN-115074789-B Circuit board blind hole rapid filling electrolytic copper plating solution and rapid filling method 深圳市板明科技股份有限公司 2022-11-25 CN disclosed
CN-115210410-A Method for producing metal-filled microstructure 富士胶片株式会社 2022-10-18 CN disclosed
CN-115074789-A Circuit board blind hole rapid filling electrolytic copper plating solution and rapid filling method 深圳市板明科技股份有限公司 2022-09-20 CN disclosed
WO-2020057325-A1 DETECTION METHOD AND SENSOR FOR L-CYSTEINE BASED ON 3,3'-DITHIOBIS(1-PROPANESULFONIC ACID)-MERCURY COMPOSITE FILM 长沙理工大学 2020-03-26 WO disclosed
US-9856572-B2 Additive for reducing voids after annealing of copper plating with through silicon via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2018-01-02 US disclosed
US-20160190007-A1 A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-30 US disclosed
US-20160168738-A1 Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-16 US disclosed
CN-101421106-B Copper electroplating of printing cylinders and copper deposition method MACDERMID INC 2010-08-11 CN disclosed
CN-101421106-A Copper electroplating of printing cylinders MACDERMID INC (US) 2009-04-29 CN disclosed