SCHEMBL17825840

SCHEMBL17825840

C/C(=C\CCNC(=O)Oc1ccc2cc(Br)ccc2c1-c1c(OC(=O)NCC/C=C(\C)C(=O)O)ccc2cc(C#N)ccc12)C(=O)O

nearest known ligand 0.45

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
NCEH1 Q6PIU2 5/20 0.45
MGLL Q99685 2/20 0.38
TBXA2R P21731 2/20 0.37
LMNA P02545 3/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
CNR1 P21554 1/20 0.37
RXFP1 Q9HBX9 4/20 0.36
KDM4E B2RXH2 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20484104 0.92 NCEH1 (0.43) NCEH1MGLLLMNASMN1; SMN2RXFP1
SCHEMBL20483932 0.91 NCEH1 (0.43) NCEH1MGLLSMN1; SMN2RXFP1
SCHEMBL20483854 0.90 NCEH1 (0.45) NCEH1MGLLTBXA2RCNR1
SCHEMBL20484105 0.90 NCEH1 (0.42) NCEH1MGLLTBXA2R
SCHEMBL20484008 0.90 NCEH1 (0.42) NCEH1MGLLTBXA2R
SCHEMBL20484011 0.88 NCEH1 (0.47) NCEH1LMNASMN1; SMN2RXFP1KDM4E
SCHEMBL17825877 0.82 NCEH1 (0.49) NCEH1MGLLTBXA2RLMNASMN1; SMN2
SCHEMBL19712907 0.82 NCEH1 (0.44) NCEH1MGLLTBXA2RLMNASMN1; SMN2
SCHEMBL20553821 0.81 NCEH1 (0.36) NCEH1MGLLLMNASMN1; SMN2RXFP1
SCHEMBL20483909 0.81 NCEH1 (0.36) NCEH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3622512-B1 FILM STRUCTURE COMPRISING A PHOTOPOLYMER COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) 2022-04-27 EP disclosed
EP-3622511-B1 HOLOGRAPHIC MEDIUM CONTAINING A PHOTOPOLYMERIC COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) 2022-04-27 EP disclosed
EP-3401909-A1 FILM STRUCTURE COMPRISING A PHOTOPOLYMER COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE Covestro Deutschland AG (DE) 2018-11-14 EP disclosed
EP-3401910-A1 HOLOGRAPHIC MEDIUM CONTAINING A PHOTOPOLYMERIC COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE Covestro Deutschland AG (DE) 2018-11-14 EP disclosed
EP-3230261-B1 NAPHTHYL ACRYLATE AS WRITE MONOMERS FOR PHOTOPOLYMERS COVESTRO DEUTSCHLAND AG (DE) 2018-09-05 EP disclosed
EP-3230261-A1 NAPHTHYL ACRYLATES AS WRITING MONOMERS FOR PHOTOPOLYMERS Covestro Deutschland AG (DE) 2017-10-18 EP disclosed
WO-2016091965-A1 NAPHTHYL ACRYLATES AS WRITING MONOMERS FOR PHOTOPOLYMERS COVESTRO DEUTSCHLAND AG (DE) 2016-06-16 WO disclosed