Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LCK | P06239 | 1/20 | 0.52 |
| ▸ | FYN | P06241 | 1/20 | 0.52 |
| ▸ | CA12 | O43570 | 2/20 | 0.49 |
| ▸ | CA1 | P00915 | 2/20 | 0.49 |
| ▸ | CA2 | P00918 | 2/20 | 0.49 |
| ▸ | CA9 | Q16790 | 2/20 | 0.49 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.49 |
| ▸ | STAT3 | P40763 | 2/20 | 0.44 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.37 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.37 |
| ▸ | GABRB3 | P28472 | 1/20 | 0.37 |
| ▸ | GABRA3 | P34903 | 1/20 | 0.37 |
| ▸ | GABRA2 | P47869 | 1/20 | 0.37 |
| ▸ | SLC7A5 | Q01650 | 1/20 | 0.36 |
| ▸ | SRD5A1 | P18405 | 1/20 | 0.34 |
| ▸ | F2 | P00734 | 4/20 | 0.33 |
| ▸ | TMPRSS6 | Q8IU80 | 3/20 | 0.33 |
| ▸ | ING2 | Q9H160 | 1/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | ELANE | P08246 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6293232 | 0.98 | LCK (0.50) | LCKFYNCA12CA1CA2 | |
| SCHEMBL6858676 | 0.98 | LCK (0.50) | LCKFYNCA12CA1CA2 | |
| SCHEMBL12455058 | 0.89 | CA12 (0.46) | LCKFYNCA12CA1CA2 | |
| SCHEMBL7459474 | 0.87 | LCK (0.50) | LCKFYNCA12CA1CA2 | |
| SCHEMBL7058435 | 0.84 | CA12 (0.47) | CA12CA1CA2CA9CA14 | |
| SCHEMBL6856699 | 0.83 | LCK (0.46) | LCKFYNCA12CA1CA2 | |
| SCHEMBL6293039 | 0.83 | LCK (0.46) | LCKFYNCA12CA1CA2 | |
| SCHEMBL21074717 | 0.82 | CA12 (0.39) | LCKFYNCA12CA1CA2 | |
| SCHEMBL4605517 | 0.82 | CA12 (0.50) | LCKFYNCA12CA1CA2 | |
| SCHEMBL4605534 | 0.82 | CA12 (0.50) | LCKFYNCA12CA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 188 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10890847-B2 | Pattern forming method, resist pattern, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2021-01-12 | — | — | US | disclosed |
| US-10678132-B2 | Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin | FUJIFILM CORPORATION (JP) | 2020-06-09 | — | — | US | disclosed |
| EP-3537217-A2 | POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM Corporation (JP) | 2019-09-11 | — | — | EP | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170176862-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20170075222-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-20080241750-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070134589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |