Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 6/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.35 |
| ▸ | USP2 | O75604 | 2/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.35 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.35 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.35 |
| ▸ | PGR | P06401 | 1/20 | 0.35 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.35 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.35 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.35 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.35 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.35 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.35 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.35 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.35 |
| ▸ | DRD1 | P21728 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12964092 | 0.91 | HMGCR (0.39) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL10178961 | 0.89 | HMGCR (0.33) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13966285 | 0.83 | — | — | |
| SCHEMBL12310006 | 0.80 | HMGCR (0.43) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL12441717 | 0.80 | HMGCR (0.41) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL10282093 | 0.79 | HMGCR (0.37) | HMGCRCYP3A4ALDH1A1TSHRKDM4E | |
| SCHEMBL12964090 | 0.78 | HMGCR (0.38) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13081846 | 0.78 | PRKCA (0.30) | — | |
| SCHEMBL20804389 | 0.78 | HMGCR (0.39) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13966959 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-8389200-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2013-03-05 | — | — | US | disclosed |
| WO-2013002417-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | WO | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| WO-2012133939-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-10-04 | — | — | WO | disclosed |
| US-8227183-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2012-07-24 | — | — | US | disclosed |
| US-20120077131-A1 | METHOD OF FORMING PATTERN USING ACTINIC-RAY OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120058427-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120028196-A1 | METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20120015301-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20110136062-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-06-09 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-7842452-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2010-11-30 | — | — | US | disclosed |
| US-7824836-B2 | Photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-11-02 | — | — | US | disclosed |
| US-7700260-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2010-04-20 | — | — | US | disclosed |
| US-20100028803-A1 | SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20090123880-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-05-14 | — | — | US | disclosed |
| US-20080274421-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20070172769-A1 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |