Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CKS1B | P61024 | 1/20 | 0.46 |
| ▸ | SKP2 | Q13309 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | HPGD | P15428 | 1/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.41 |
| ▸ | SCN9A | Q15858 | 10/20 | 0.41 |
| ▸ | LCK | P06239 | 1/20 | 0.40 |
| ▸ | FYN | P06241 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | SCN5A | Q14524 | 3/20 | 0.39 |
| ▸ | CA2 | P00918 | 2/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA9 | Q16790 | 1/20 | 0.39 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14041255 | 0.91 | CKS1B (0.40) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL22064242 | 0.89 | CKS1B (0.39) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL16141696 | 0.89 | ALDH1A1 (0.39) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL18788535 | 0.87 | SCN9A (0.45) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL18810694 | 0.87 | SCN9A (0.45) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL27261412 | 0.87 | ALDH1A1 (0.55) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL6390096 | 0.86 | CKS1B (0.51) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL17879781 | 0.86 | CKS1B (0.37) | CKS1BSKP2ALDH1A1HPGDNPSR1 | |
| SCHEMBL6393211 | 0.84 | CKS1B (0.44) | CKS1BSKP2ALDH1A1SCN9AMEN1 | |
| SCHEMBL18810699 | 0.83 | LCK (0.36) | CKS1BSKP2ALDH1A1HPGDNPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 171 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| WO-2008123560-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-16 | — | — | WO | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20070088131-A1 | Sulfonate and resist composition | TOISHI KOUJI | 2007-04-19 | — | — | US | disclosed |
| US-6893794-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-05-17 | — | — | US | disclosed |
| US-20040018445-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-01-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | CKS1B 2143/4885SKP2 2522/4885ALDH1A1 492/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.