SCHEMBL1789946

SCHEMBL1789946

C1=CCC([Er](C2=CC=CC2)C2=CC=CC2)=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL184326 0.69
SCHEMBL815752 0.65
SCHEMBL8458318 0.65
Hydrochloric Acid SCHEMBL9079162 0.62
Hydrochloric Acid SCHEMBL564336 0.62
SCHEMBL539151 0.62
SCHEMBL6300789 0.62
SCHEMBL2323781 0.62
Hydrochloric Acid SCHEMBL6749166 0.62
SCHEMBL315517 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118048148-A High-performance narrow-band circularly polarized luminescent material and application thereof 深圳大学 2024-05-17 CN claimed
US-8841153-B2 Method for producing a doped organic semiconducting layer OSRAM OPTO SEMICONDUCTORS GMBH (DE) 2014-09-23 US claimed
US-20070012907-A1 Doped Semiconductor Nanocrystal Layers And Preparation Thereof GROUP IV SEMICONDUCTOR INC. 2007-01-18 US claimed
EP-1588423-A2 RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS Group IV Semiconductor Inc. (CA) 2005-10-26 EP claimed
US-20040214362-A1 Doped semiconductor nanocrystal layers and preparation thereof MCMASTER UNIVERSITY (CA) 2004-10-28 US claimed
WO-2004066345-A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF GROUP IV SEMICONDUCTOR INC. (CA) 2004-08-05 WO claimed
US-20040149353-A1 Doped semiconductor powder and preparation thereof KIRSTEEN MGMT. GROUP LLC 2004-08-05 US claimed
WO-2004066346-A2 RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS GROUP IV SEMICONDUCTOR INC. (CA) 2004-08-05 WO claimed
CN-1117389-C Semiconductor layer mixed with chemical vapor deposited rare-earth IBM (US) 2003-08-06 CN claimed
CN-1255735-A Semiconductor layer mixed with chemical vapor deposited rare-earth IBM (US) 2000-06-07 CN claimed
EP-0586321-B1 Formation of supersaturated rare earth doped semiconductor layers by CVD IBM (US) 1998-05-20 EP claimed
US-5322813-A Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-06-21 US claimed
EP-0586321-A2 Supersaturated rare earth doped semiconductor layers by CVD INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-03-09 EP claimed
CN-119866041-A Method for forming metal silicate film and semiconductor device structure ASM IP私人控股有限公司 2025-04-22 CN disclosed
CN-119866042-A Method for forming metal silicate film and semiconductor device structure ASM IP私人控股有限公司 2025-04-22 CN disclosed
CN-111199871-B Method for forming metal silicate film and semiconductor device structure ASM IP私人控股有限公司 2025-02-07 CN disclosed
EP-0586321-A2 Supersaturated rare earth doped semiconductor layers by CVD INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-03-09 EP disclosed
EP-0267377-B1 ELECTROLUMINESCENT DISPLAY APPARATUS AND PROCESS FOR PRODUCING THE SAME HITACHI, LTD. (JP) 1993-02-03 EP disclosed
US-4862033-A Electroluminescent display apparatus having a multi-color illuminant layer and process for producing the same HITACHI, LTD. (JP) 1989-08-29 US disclosed
EP-0267377-A1 Electroluminescent display apparatus and process for producing the same HITACHI, LTD. (JP) 1988-05-18 EP disclosed