SCHEMBL17974541

SCHEMBL17974541

CC1C(C)C2CC1C1C3CC(C(=O)OC4CCCCC4)C(C3)C21

nearest known ligand 0.34

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CHRM2 P08172 2/20 0.34
CHRM4 P08173 2/20 0.34
CHRM5 P08912 2/20 0.34
CHRM1 P11229 2/20 0.34
CHRM3 P20309 2/20 0.34
EPHX1 P07099 2/20 0.33
FABP7 O15540 1/20 0.33
FABP5 Q01469 1/20 0.33
NAAA Q02083 1/20 0.31
HTT P42858 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2681392 0.86 EPHX1 (0.38) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL2681397 0.85 EPHX1 (0.35) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL29311822 0.84 FABP7 (0.35) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL111551 0.80
SCHEMBL12271054 0.79 CYP1A2 (0.33) CHRM2CHRM4CHRM3
SCHEMBL13103753 0.78 EPHX1 (0.38) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL12429908 0.77 FKBP1A (0.36) EPHX1
SCHEMBL30209917 0.77 CYP3A4 (0.36) CHRM2CHRM4CHRM5CHRM1CHRM3
SCHEMBL12429937 0.77
SCHEMBL13103754 0.76 EPHX1 (0.36) CHRM2CHRM4CHRM5CHRM1CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-9841679-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-12-12 US disclosed
US-9791777-B2 Active light sensitive or radiation sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-10-17 US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 US disclosed
US-20170038685-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-02-09 US disclosed
US-20160347897-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-12-01 US disclosed
US-20160349613-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-12-01 US disclosed
US-20160313645-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-10-27 US disclosed
US-20160266488-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-09-15 US disclosed
US-20160223905-A1 ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-08-04 US disclosed