SCHEMBL1827807

SCHEMBL1827807

F[C](F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.37

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.37
KDM4E B2RXH2 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
L3MBTL1 Q9Y468 2/20 0.33
HTT P42858 1/20 0.33
USP2 O75604 1/20 0.30
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1824895 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL5487198 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL5489724 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL1825529 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL1593172 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL1829369 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL1827977 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL5492820 1.00 TSHR (0.37) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL482289 0.97 KDM4E (0.38) TSHRKDM4ETDP1L3MBTL1HTT
SCHEMBL482327 0.89 KDM4E (0.39) TSHRKDM4ETDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1686425-B1 METHOD FOR FORMING MULTILAYER RESIST DAIKIN IND LTD (JP) 2018-06-13 EP disclosed
EP-1818723-B1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR CORP (JP) 2011-05-04 EP disclosed
US-7709182-B2 Composition for forming antireflection film, layered product, and method of forming resist pattern JSR CORPORATION (JP) 2010-05-04 US disclosed
US-20080124524-A1 Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern JSR CORPORATION (JP) 2008-05-29 US disclosed
US-20070196763-A1 Method of forming laminated resist DAIKIN INDUSTRIES, LTD. 2007-08-23 US disclosed
EP-1818723-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR Corporation (JP) 2007-08-15 EP disclosed
EP-1686425-A1 METHOD FOR FORMING MULTILAYER RESIST Daikin Industries, Ltd. (JP) 2006-08-02 EP disclosed
US-6906167-B2 Metathesis ring-opening polymerization using epoxides; using rare earth metal catalyst and reducing agent KAO CORPORATION (JP) 2005-06-14 US disclosed
US-20050004344-A1 Process for producing polyether KAO CORPORATION (JP) 2005-01-06 US disclosed
US-6818148-B1 CONTAINING NONIONIC PERFLUORO ENDCAPPED POLYETHER SURFACTANT; UNIFORM THICKNESS, DEFECT FREE, AQUEOUS ALKALINE DEVELOPER WETTABLE COATINGS; SOLUTION STORAGE STABILITY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-16 US disclosed
US-6800723-B2 EPOXY RESINS FORMED VIA CATALYTIC METHATHESIS RING-OPENING POLYMERIZATION WITH RARE EARTH METAL COMPLEX KAO CORPORATION (JP) 2004-10-05 US disclosed
EP-1057845-B1 PROCESS FOR PRODUCING POLYETHER KAO CORP (JP) 2004-01-21 EP disclosed
US-20020151674-A1 Epoxy resins formed via catalytic methathesis ring-opening polymerization with rare earth metal complex KAO CORPORATION (JP) 2002-10-17 US disclosed
US-6417323-B1 RING-OPENING POLYMERIZATION OF SUBSTITUTED EPOXIDE IN RARE EARTH COMPOUND AND REDUCING AGENT PRESENCE; ETHERIFICATION KAO CORPORATION (JP) 2002-07-09 US disclosed
EP-1057845-A1 PROCESS FOR PRODUCING POLYETHER Kao Corporation (JP) 2000-12-06 EP disclosed
EP-0381005-A2 Ocular lens material Menicon Co., Ltd. (JP) 1990-08-08 EP disclosed