SCHEMBL184932

SCHEMBL184932

[Al].[Ga].[In]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31049752 1.00
SCHEMBL29454388 1.00
SCHEMBL29599856 1.00
SCHEMBL9094976 0.87
SCHEMBL5533576 0.87
SCHEMBL12485405 0.87
SCHEMBL1405839 0.87
SCHEMBL733755 0.87
SCHEMBL10424509 0.87
SCHEMBL3190142 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3991212-B1 OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING SAID DEVICE Aledia (FR) 2025-10-08 EP claimed
CN-119582000-A Semiconductor laser structure with step strain layer 无锡市华辰芯光半导体科技有限公司 2025-03-07 CN claimed
CN-119340786-A Semiconductor laser structure with strain layer 无锡市华辰芯光半导体科技有限公司 2025-01-21 CN claimed
CN-119324373-A Semiconductor laser structure with cyclic strain buffer layer 无锡市华辰芯光半导体科技有限公司 2025-01-17 CN claimed
CN-119297736-A Semiconductor laser structure with cyclic strain buffer layer and P-type strain buffer layer 无锡市华辰芯光半导体科技有限公司 2025-01-10 CN claimed
CN-110061418-B Semiconductor laser device and method of manufacturing the same 三星电子株式会社 2024-08-06 CN claimed
EP-3144979-B1 ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES BOEING CO (US) 2024-05-08 EP claimed
US-11715807-B2 Multijunction solar cells SOLAERO TECHNOLOGIES CORP. (US) 2023-08-01 US claimed
EP-3563425-B1 OPTOELECTRONIC DEVICE WITH LIGHT-EMITTING DIODES AND MANUFACTURING METHOD Aledia (FR) 2023-05-17 EP claimed
US-20230060357-A1 MULTIJUNCTION SOLAR CELLS SOLAERO TECHNOLOGIES CORP. 2023-03-02 US claimed
CN-1949549-A Light emitting diode chip CANYUAN PHOTOELECTRIC CO LTD (CN) 2007-04-18 CN claimed
CN-1750279-A Nitride epitaxial layer structure and manufacturing method thereof CANYUAN PHOTOELECTRIC CO LTD (CN) 2006-03-22 CN claimed
EP-0880181-B1 Low voltage-drop electrical contact for gallium (aluminium, indium) nitride LUMILEDS LIGHTING LLC (US) 2006-02-22 EP claimed
EP-1313405-B1 MEDICAL LASER TREATMENT MODULE MEISTER JOERG (DE) 2004-03-31 EP claimed
US-6559482-B1 III-N compound semiconductor bipolar transistor structure and method of manufacture SOUTH EPITAXY CORPORATION (TW) 2003-05-06 US claimed
EP-0989539-B1 Pixel with LEDs having top contacts in one plane, and displays incorporating the same CREE INC (US) 2002-06-12 EP claimed
US-6133589-A AlGaInN-based LED having thick epitaxial layer for improved light extraction LUMILEDS LIGHTING, U.S., LLC (US) 2000-10-17 US claimed
EP-0870294-B1 True color flat panel display LED matrix module with driving circuitry CREE INC (US) 2000-09-06 EP claimed
WO-1998022998-A1 ELECTRON BEAM PUMPED SEMICONDUCTOR LASER SCREEN AND METHOD OF FORMING MCDONNELL DOUGLAS (US) 1998-05-28 WO claimed
US-5684309-A Stacked quantum well aluminum indium gallium nitride light emitting diodes NORTH CAROLINA STATE UNIVERSITY (US) 1997-11-04 US claimed