SCHEMBL5533576

SCHEMBL5533576

[Al].[Cu].[Ga].[In]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29509674 0.89
Selenium SCHEMBL2068312 0.89
SCHEMBL29509606 0.89
SCHEMBL31049752 0.87
SCHEMBL29664661 0.87
SCHEMBL29384571 0.87
SCHEMBL31096457 0.87
SCHEMBL30922199 0.87
SCHEMBL184932 0.87
SCHEMBL31621903 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105336800-A Preparation method of light absorption layer of CIGS-base thin film solar cell XIAMEN SOLARSCI CO LTD 2016-02-17 CN claimed
CN-102893370-B Photoelectronically active, chalcogen-based thin film structures incorporating tie layers DOW GLOBAL TECHNOLOGIES LLC (US) 2015-12-16 CN claimed
CN-102893370-A Photoelectronically active, chalcogen-based thin film structures incorporating tie layers DOW GLOBAL TECHNOLOGIES LLC 2013-01-23 CN claimed
US-10156009-B2 Silver copper indium gallium selenide reactive sputtering method and apparatus, and photovoltaic cell containing same BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD. (CN) 2018-12-18 US disclosed
US-20180158973-A1 SILVER COPPER INDIUM GALLIUM SELENIDE REACTIVE SPUTTERING METHOD AND APPARATUS, AND PHOTOVOLTAIC CELL CONTAINING SAME BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., (CN) 2018-06-07 US disclosed
US-20170236710-A1 MACHINE AND PROCESS FOR CONTINUOUS, SEQUENTIAL, DEPOSITION OF SEMICONDUCTOR SOLAR ABSORBERS HAVING VARIABLE SEMICONDUCTOR COMPOSITION DEPOSITED IN MULTIPLE SUBLAYERS ASCENT SOLAR TECH INC (US) 2017-08-17 US disclosed
US-9601650-B1 Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers ASCENT SOLAR TECHNOLOGIES, INC. (US) 2017-03-21 US disclosed
CN-105336800-A Preparation method of light absorption layer of CIGS-base thin film solar cell XIAMEN SOLARSCI CO LTD 2016-02-17 CN disclosed
CN-102893370-B Photoelectronically active, chalcogen-based thin film structures incorporating tie layers DOW GLOBAL TECHNOLOGIES LLC (US) 2015-12-16 CN disclosed
US-9117965-B2 Method of manufacture of chalcogenide-based photovoltaic cells DOW GLOBAL TECHNOLOGIES LLC 2015-08-25 US disclosed
US-20140360554-A1 METHOD OF PRODUCING TWO OR MORE THIN-FILM-BASED INTERCONNECTED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC 2014-12-11 US disclosed
WO-2003026022-A2 SYNTHESIS OF LAYERS, COATINGS OR FILMS USING SURFACTANTS HELIOVOLT CORPORATION (US) 2003-03-27 WO disclosed
US-20030054662-A1 Synthesis of layers, coatings or films using surfactants SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030051664-A1 Apparatus for the synthesis of layers, coatings or films SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030054661-A1 Synthesis of layers, coatings or films using electrostatic fields SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030054582-A1 Synthesis of layers, coatings or films using precursor layer exerted pressure containment SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030052382-A1 Photovoltaic devices and compositions for use therein SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030054663-A1 Synthesis of layers, coatings or films using collection layer SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-20030052391-A1 Layers, coatings or films synthesized using precursor layer exerted pressure containment SK INNOVATION CO., LTD (KR) 2003-03-20 US disclosed
US-6500733-B1 Synthesis of layers, coatings or films using precursor layer exerted pressure containment HELIOVOLT CORPORATION 2002-12-31 US disclosed