⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15412001 | 0.87 | — | — | |
| SCHEMBL16669828 | 0.87 | — | — | |
| SCHEMBL919080 | 0.87 | — | — | |
| SCHEMBL10379776 | 0.82 | — | — | |
| SCHEMBL4956668 | 0.82 | — | — | |
| SCHEMBL6475092 | 0.82 | — | — | |
| SCHEMBL5488590 | 0.82 | — | — | |
| SCHEMBL2945455 | 0.82 | — | — | |
| SCHEMBL7729 | 0.82 | — | — | |
| SCHEMBL9765580 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 314 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260068548-A1 | RESISTIVE SWITCHING STRUCTURE TO IMPROVE RRAM | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-05 | — | — | US | claimed |
| US-20250359079-A1 | MIM CAPACITOR AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| US-20250234793-A1 | SEMICONDUCTOR STRUCTURE INCLUDING MEMORY UNIT AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-07-17 | — | — | US | claimed |
| US-12102019-B2 | Data storage structure for improving memory cell reliability | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-24 | — | — | US | claimed |
| US-20230345847-A1 | DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-26 | — | — | US | claimed |
| CN-116282912-A | High-hardness high-Young modulus ultrahigh-refractive index aluminum-tantalum oxide glass and preparation method and application thereof | 中国科学院上海硅酸盐研究所 | 2023-06-23 | — | — | CN | claimed |
| CN-106206449-B | The high yield RRAM unit of film scheme with optimization | 台湾积体电路制造股份有限公司 | 2019-05-24 | — | — | CN | claimed |
| US-10076904-B2 | Integrated circuit devices comprising memristors | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2018-09-18 | — | — | US | claimed |
| US-20180022103-A1 | PRINTHEADS WITH EPROM CELLS HAVING ETCHED MULTI-METAL FLOATING GATES | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2018-01-25 | — | — | US | claimed |
| US-9876167-B2 | High yield RRAM cell with optimized film scheme | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2018-01-23 | — | — | US | claimed |
| CN-1501502-A | Semiconductor device and method for manufacturing the same | ���µ�����ҵ��ʽ���� | 2004-06-02 | — | — | CN | claimed |
| US-20040094791-A1 | Semiconductor device and method for fabricating the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-05-20 | — | — | US | claimed |
| EP-1420451-A2 | Semiconductor non-volatile memory device and method for fabricating the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2004-05-19 | — | — | EP | claimed |
| US-6730951-B2 | Capacitor, semiconductor memory device, and method for manufacturing the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| CN-1393931-A | Capacitance element, semiconductor storage and preparing method thereof | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2003-01-29 | — | — | CN | claimed |
| EP-1271624-A2 | Capacitor, semiconductor memory device, and method for manufacturing the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-02 | — | — | EP | claimed |
| US-20020195633-A1 | Capacitor, semiconductor memory device, and method for manufacturing the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2002-12-26 | — | — | US | claimed |
| CN-1003752-B | Ultrahigh frequency medium power load and improvement of manufacturing process thereof | 上海市测试技术研究所 | 1989-03-29 | — | — | CN | claimed |
| CN-86106375-A | Power termination and to the improvement of manufacturing process in the hyperfrequency | — | 1988-04-06 | — | — | CN | claimed |
| CN-86207242-U | UHF MIDDLE POWER LOAD | — | 1988-03-09 | — | — | CN | claimed |