SCHEMBL919080

SCHEMBL919080

[Al+3].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Ta+5]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4B

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL230574 0.89
SCHEMBL407549 0.87
SCHEMBL31124806 0.87
SCHEMBL1860943 0.87
SCHEMBL3911824 0.87
SCHEMBL21806319 0.87
SCHEMBL6699419 0.75
SCHEMBL15412001 0.75
SCHEMBL7875461 0.75
SCHEMBL864658 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7771531-B2 Manufacturing method and usage of crystallized metal oxide thin film NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2010-08-10 US claimed
US-20080035898-A1 Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2008-02-14 US claimed
US-20260129864-A1 CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, METHOD OF FABRICATING THE CAPACITOR SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-05-07 US disclosed
EP-4738401-A1 CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, METHOD OF FABRICATING THE CAPACITOR Samsung Electronics Co., Ltd. (KR) 2026-05-06 EP disclosed
CN-116266992-A Integrated chip and forming method thereof 台湾积体电路制造股份有限公司 2023-06-20 CN disclosed
CN-116234320-A Integrated chip and forming method thereof 台湾积体电路制造股份有限公司 2023-06-06 CN disclosed
US-8436396-B2 Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp TOYODA GOSEI CO., LTD. (JP) 2013-05-07 US disclosed
US-20110068349-A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP SHOWA DENKO K.K. (JP) 2011-03-24 US disclosed
US-20110018022-A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME TOYODA GOSEI CO., LTD. (JP) 2011-01-27 US disclosed
US-7771531-B2 Manufacturing method and usage of crystallized metal oxide thin film NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2010-08-10 US disclosed
US-20080044590-A1 Manufacturing Method of Phosphor Film NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2008-02-21 US disclosed
US-20080035898-A1 Manufacturing Method and Usage of Crystallized Metal Oxide Thin Film NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2008-02-14 US disclosed
US-6943136-B2 Superconducting structure THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2005-09-13 US disclosed
US-6602588-B1 Superconducting structure including mixed rare earth barium-copper compositions THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 2003-08-05 US disclosed
US-20030125213-A1 Superconducting structure LOS ALAMOS NATIONAL SECURITY, LLC 2003-07-03 US disclosed
US-6541136-B1 Superconducting structure THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 2003-04-01 US disclosed
EP-1126971-A2 SUPERCONDUCTING STRUCTURE INCLUDING MIXED RARE EARTH BARIUM-COPPER COMPOSITIONS The Regents of The University of California (US) 2001-08-29 EP disclosed
WO-2000022652-A2 SUPERCONDUCTING STRUCTURE INCLUDING MIXED RARE EARTH BARIUM-COPPER COMPOSITIONS THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2000-04-20 WO disclosed
WO-2000016412-A1 SUPERCONDUCTING STRUCTURE THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2000-03-23 WO disclosed