SCHEMBL18675345

SCHEMBL18675345

Oc1ccc(/C2=C3\C=CC(N3)C(c3ccc(O)cc3)C3=N/C(=C(/c4ccc(O)cc4)c4ccc([nH]4)/C(c4ccc(O)cc4)=C4/C=CC2=N4)C=C3)cc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14960539 0.85 — —
SCHEMBL16501168 0.74 — —
SCHEMBL14960473 0.74 — —
SCHEMBL17366434 0.73 — —
SCHEMBL17366427 0.72 — —
SCHEMBL14768883 0.71 — —
SCHEMBL20921299 0.68 — —
SCHEMBL11996153 0.66 — —
SCHEMBL499291 0.66 ESR1 (0.42) —
SCHEMBL8930934 0.64 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10268117-B2 Top-layer membrane formation composition and method for forming resist pattern using same AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) 2019-04-23 — — US disclosed
US-20170090288-A1 TOP-LAYER MEMBRANE FORMATION COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING SAME AZ ELECTRONIC MATERIALS S.À R.L. (LU) 2017-03-30 — — US disclosed
US-20170090288-A1 TOP-LAYER MEMBRANE FORMATION COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING SAME AZ ELECTRONIC MATERIALS S.À R.L. (LU) 2017-03-30 — — US disclosed
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