⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4531772 | 0.89 | — | — | |
| Water SCHEMBL9756931 | 0.89 | — | — | |
| SCHEMBL28731851 | 0.89 | — | — | |
| Hydrochloric Acid SCHEMBL14603388 | 0.89 | — | — | |
| SCHEMBL4392373 | 0.89 | — | — | |
| SCHEMBL29129564 | 0.89 | — | — | |
| SCHEMBL15213 | 0.87 | — | — | |
| SCHEMBL28964906 | 0.82 | — | — | |
| SCHEMBL29278697 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL25368540 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 90 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112768448-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-05-28 | — | — | CN | claimed |
| US-11942514-B2 | Semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-03-26 | — | — | US | claimed |
| US-11876094-B2 | Method for fabricating semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-01-16 | — | — | US | claimed |
| US-20230253210-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYER | NANYA TECHNOLOGY CORPORATION (TW) | 2023-08-10 | — | — | US | claimed |
| US-20230223440-A1 | SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2023-07-13 | — | — | US | claimed |
| CN-116377579-A | Long-life quartz crucible for improving crystallization rate of single crystal silicon first rod | 锦州佑鑫石英科技有限公司 | 2023-07-04 | — | — | CN | claimed |
| US-11631738-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-18 | — | — | US | claimed |
| US-11309387-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-04-19 | — | — | US | claimed |
| US-20220085164-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-17 | — | — | US | claimed |
| US-20220077144-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-10 | — | — | US | claimed |
| CN-112768448-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-05-07 | — | — | CN | claimed |
| US-20210134953-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-05-06 | — | — | US | claimed |
| US-20210118874-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-04-22 | — | — | US | claimed |
| EP-1175519-B1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC ELECTRONIC MATERIALS (US) | 2003-10-01 | — | — | EP | claimed |
| US-6461427-B2 | Barium doping of molten silicon for use in crystal growing process | MEMC ELECTRONIC MATERIALS, INC. | 2002-10-08 | — | — | US | claimed |
| EP-1175519-A1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC Electronic Materials, Inc. (US) | 2002-01-30 | — | — | EP | claimed |
| US-6319313-B1 | CHARGING POLYSILICON TO CRUCIBLE; MELTING THE POLYSILICON TO FORM A MASS OF MOLTEN SILICON IN CRUCIBLE; FORMING A LAYER OF DEVITRIFIED SILICA ON INSIDE SURFACE OF CRUCIBLE IN CONTACT WITH MOLTEN MASS, LAYER BEING NUCLEATED BY THE BARIUM | MEMC ELECTRONIC MATERIALS, INC. | 2001-11-20 | — | — | US | claimed |
| US-20010032580-A1 | Barium doping of molten silicon for use in crystal growing process | SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H) (SG) | 2001-10-25 | — | — | US | claimed |
| WO-2000055394-A1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC ELECTRONIC MATERIALS, INC. (US) | 2000-09-21 | — | — | WO | claimed |
| US-20260040607-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| CN-113410290-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-12-27 | — | — | CN | disclosed |
| US-12112950-B2 | Semiconductor device with protection layer and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2024-10-08 | — | — | US | disclosed |
| CN-112768448-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-05-28 | — | — | CN | disclosed |
| US-11942514-B2 | Semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-03-26 | — | — | US | disclosed |
| CN-112447721-B | Semiconductor device and method for manufacturing the same | 南亚科技股份有限公司 | 2024-03-05 | — | — | CN | disclosed |
| US-20240055521-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2024-02-15 | — | — | US | disclosed |
| US-11876094-B2 | Method for fabricating semiconductor device | NANYA TECHNOLOGY CORPORATION (TW) | 2024-01-16 | — | — | US | disclosed |
| US-11830919-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-11-28 | — | — | US | disclosed |
| US-20230352588-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2023-11-02 | — | — | US | disclosed |
| CN-116889885-A | Catalyst for 1-methoxy-2-acetone synthesis process and preparation method and application thereof | 浙江师范大学 | 2023-10-17 | — | — | CN | disclosed |
| CN-116581153-A | Semiconductor device with a semiconductor element having a plurality of electrodes | 南亚科技股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| CN-116581124-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| US-20230253210-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYER | NANYA TECHNOLOGY CORPORATION (TW) | 2023-08-10 | — | — | US | disclosed |
| US-20230253209-A1 | SEMICONDUCTOR DEVICE WITH PROTECTION LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2023-08-10 | — | — | US | disclosed |
| US-20230223440-A1 | SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2023-07-13 | — | — | US | disclosed |
| CN-116377579-A | Long-life quartz crucible for improving crystallization rate of single crystal silicon first rod | 锦州佑鑫石英科技有限公司 | 2023-07-04 | — | — | CN | disclosed |
| US-11631738-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-18 | — | — | US | disclosed |
| US-11621341-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-04 | — | — | US | disclosed |
| US-11527538-B2 | Method for fabricating a semiconductor device with array region and peripheral region | NANYA TECHNOLOGY CORPORATION (TW) | 2022-12-13 | — | — | US | disclosed |
| US-11502181-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-11-15 | — | — | US | disclosed |
| US-11309387-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-04-19 | — | — | US | disclosed |
| US-20220085164-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-17 | — | — | US | disclosed |
| US-20220077144-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | NANYA TECHNOLOGY CORPORATION (TW) | 2022-03-10 | — | — | US | disclosed |
| US-20220045187-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2022-02-10 | — | — | US | disclosed |
| CN-113497086-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-10-12 | — | — | CN | disclosed |
| CN-113497041-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-10-12 | — | — | CN | disclosed |
| CN-113410290-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-09-17 | — | — | CN | disclosed |
| US-20210288160-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-09-16 | — | — | US | disclosed |
| US-11088140-B2 | Multiple semiconductor elements with different threshold voltages | NANYA TECHNOLOGY CORPORATION (TW) | 2021-08-10 | — | — | US | disclosed |
| US-20210143261-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-05-13 | — | — | US | disclosed |
| CN-112786590-A | Semiconductor device and method for manufacturing the same | 南亚科技股份有限公司 | 2021-05-11 | — | — | CN | disclosed |
| CN-112768448-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-05-07 | — | — | CN | disclosed |
| US-20210134953-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-05-06 | — | — | US | disclosed |
| US-20210118874-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-04-22 | — | — | US | disclosed |
| US-20210066303-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-03-04 | — | — | US | disclosed |
| US-10725331-B2 | Display device including a light amount control layer | SAMSUNG DISPLAY CO., LTD. (KR) | 2020-07-28 | — | — | US | disclosed |
| EP-3318922-B1 | DISPLAY DEVICE | SAMSUNG DISPLAY CO LTD (KR) | 2020-02-12 | — | — | EP | disclosed |
| US-20180164640-A1 | PHOTO-LUMINESCENT DISPLAY DEVICE | SAMSUNG DISPLAY CO., LTD. (KR) | 2018-06-14 | — | — | US | disclosed |
| US-20180129098-A1 | DISPLAY DEVICE INCLUDING A LIGHT AMOUNT CONTROL LAYER | SAMSUNG DISPLAY CO., LTD. (KR) | 2018-05-10 | — | — | US | disclosed |
| EP-3318922-A1 | DISPLAY DEVICE | Samsung Display Co., Ltd. (KR) | 2018-05-09 | — | — | EP | disclosed |
| US-20180120646-A1 | DISPLAY DEVICE | SAMSUNG DISPLAY CO., LTD. (KR) | 2018-05-03 | — | — | US | disclosed |
| US-9885818-B2 | Backlight unit including light converting unit and display device having the same | SAMSUNG DISPLAY CO., LTD. (KR) | 2018-02-06 | — | — | US | disclosed |
| US-20180016702-A1 | METHOD FOR GROWING MONOCRYSTALLINE SILICON BY USING CZOCHRALSKI METHOD | ZING SEMICONDUCTOR CORPORATION (CN) | 2018-01-18 | — | — | US | disclosed |
| US-20170205666-A1 | DISPLAY DEVICE | SAMSUNG DISPLAY CO., LTD. (KR) | 2017-07-20 | — | — | US | disclosed |
| US-20160341877-A1 | BACKLIGHT UNIT INCLUDING LIGHT CONVERTING UNIT AND DISPLAY DEVICE HAVING THE SAME | SAMSUNG DISPLAY CO., LTD. (KR) | 2016-11-24 | — | — | US | disclosed |
| US-8907112-B2 | Method for preparing epoxide | CHINA PETROCHEMICAL DEVELOPMENT CORPORATION (TW) | 2014-12-09 | — | — | US | disclosed |
| US-20140179938-A1 | METHOD FOR PREPARING EPOXIDE | CHINA PETROCHEMICAL DEVELOPMENT CORPORATION, TAIPEI (TAIWAN) (TW) | 2014-06-26 | — | — | US | disclosed |
| EP-2215290-B1 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY INSOLUBLE GASES INTO THE MELT | MEMC ELECTRONIC MATERIALS (US) | 2012-01-04 | — | — | EP | disclosed |
| US-20110237063-A1 | METHODS OF FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-29 | — | — | US | disclosed |
| EP-2215290-A1 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY INSOLUBLE GASES INTO THE MELT | MEMC Electronic Materials, Inc. (US) | 2010-08-11 | — | — | EP | disclosed |
| US-20100120211-A1 | Methods of manufacturing Semiconductor Devices Including PMOS and NMOS Transistors Having Different Gate Structures | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-05-13 | — | — | US | disclosed |
| WO-2009064674-A1 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY INSOLUBLE GASES INTO THE MELT | MEMC ELECTRONIC MATERIALS, INC. (US) | 2009-05-22 | — | — | WO | disclosed |
| US-20090120353-A1 | REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY-INSOLUBLE GASES INTO THE MELT | MEMC ELECTRONIC MATERIALS, INC. (US) | 2009-05-14 | — | — | US | disclosed |
| EP-1904420-A1 | VISCOUS MATERIALS AND METHOD FOR PRODUCING | Piazza, Matthew (US) | 2008-04-02 | — | — | EP | disclosed |
| CN-1313407-C | Fused quartz article with controlled devitrification | GEN ELECTRIC (US) | 2007-05-02 | — | — | CN | disclosed |
| EP-1771400-A2 | VISCOUS MATERIALS AND METHOD FOR PRODUCING | Piazza, Matthew (US) | 2007-04-11 | — | — | EP | disclosed |
| WO-2007005041-A1 | VISCOUS MATERIALS AND METHOD FOR PRODUCING | PIAZZA MATHEW (US) | 2007-01-11 | — | — | WO | disclosed |
| US-7118630-B1 | Apparatus for depositing a low work function material | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2006-10-10 | — | — | US | disclosed |
| US-20060047025-A1 | Viscous materials and method for producing | CARPENTERCRETE, LLC | 2006-03-02 | — | — | US | disclosed |
| WO-2006004813-A2 | VISCOUS MATERIALS AND METHOD FOR PRODUCING | PIAZZA MATHEW (US) | 2006-01-12 | — | — | WO | disclosed |
| US-20050288397-A1 | Viscous materials and method for producing | CARPENTERCRETE, LLC | 2005-12-29 | — | — | US | disclosed |
| CN-1665751-A | Fused quartz article with controlled devitrification | GEN ELECTRIC (US) | 2005-09-07 | — | — | CN | disclosed |
| EP-1175519-B1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC ELECTRONIC MATERIALS (US) | 2003-10-01 | — | — | EP | disclosed |
| US-6461427-B2 | Barium doping of molten silicon for use in crystal growing process | MEMC ELECTRONIC MATERIALS, INC. | 2002-10-08 | — | — | US | disclosed |
| EP-1175519-A1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC Electronic Materials, Inc. (US) | 2002-01-30 | — | — | EP | disclosed |
| US-6319313-B1 | CHARGING POLYSILICON TO CRUCIBLE; MELTING THE POLYSILICON TO FORM A MASS OF MOLTEN SILICON IN CRUCIBLE; FORMING A LAYER OF DEVITRIFIED SILICA ON INSIDE SURFACE OF CRUCIBLE IN CONTACT WITH MOLTEN MASS, LAYER BEING NUCLEATED BY THE BARIUM | MEMC ELECTRONIC MATERIALS, INC. | 2001-11-20 | — | — | US | disclosed |
| US-20010032580-A1 | Barium doping of molten silicon for use in crystal growing process | SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H) (SG) | 2001-10-25 | — | — | US | disclosed |
| WO-2000055394-A1 | BARIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS | MEMC ELECTRONIC MATERIALS, INC. (US) | 2000-09-21 | — | — | WO | disclosed |
| US-6120857-A | Low work function surface layers produced by laser ablation using short-wavelength photons | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2000-09-19 | — | — | US | disclosed |
| WO-1999059759-A2 | LOW WORK FUNCTION SURFACE LAYERS PRODUCED BY LASER ABLATION USING SHORT-WAVELENGTH PHOTONS | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1999-11-25 | — | — | WO | disclosed |
| WO-1999059759-A2 | LOW WORK FUNCTION SURFACE LAYERS PRODUCED BY LASER ABLATION USING SHORT-WAVELENGTH PHOTONS | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1999-11-25 | — | — | WO | disclosed |