⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6445141 | 0.80 | — | — | |
| SCHEMBL1889090 | 0.64 | — | — | |
| SCHEMBL28755934 | 0.59 | — | — | |
| SCHEMBL28749807 | 0.58 | — | — | |
| SCHEMBL692808 | 0.53 | — | — | |
| SCHEMBL444176 | 0.52 | — | — | |
| SCHEMBL460631 | 0.52 | — | — | |
| SCHEMBL3111066 | 0.51 | CHRNB2 (0.34) | — | |
| SCHEMBL473606 | 0.51 | CHRNB2 (0.34) | — | |
| SCHEMBL29781385 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8349746-B2 | Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure | APPLIED MATERIALS, INC. (US) | 2013-01-08 | — | — | US | claimed |
| WO-2012064491-A2 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2012-05-18 | — | — | WO | claimed |
| US-20120121823-A1 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2012-05-17 | — | — | US | claimed |
| WO-2011106075-A2 | A MICROELECTRONIC STRUCTURE INCLUDING A LOW K DIELECTRIC AND A METHOD OF CONTROLLING CARBON DISTRIBUTION IN THE STRUCTURE | APPLIED MATERIALS, INC. (US) | 2011-09-01 | — | — | WO | claimed |
| US-20110204492-A1 | Microelectronic structure including a low K dielectric and a method of controlling carbon distribution in the structure | APPLIED MATERIALS, INC. | 2011-08-25 | — | — | US | claimed |
| US-7947611-B2 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | APPLIED MATERIALS, INC. (US) | 2011-05-24 | — | — | US | claimed |
| US-7825042-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2010-11-02 | — | — | US | claimed |
| US-20100081291-A1 | Very Low Dielectric Constant Plasma-Enhanced CVD Films | APPLIED MATERIALS, INC. (US) | 2010-04-01 | — | — | US | claimed |
| US-20080280457-A1 | METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER | APPLIED MATERIALS, INC. | 2008-11-13 | — | — | US | claimed |
| US-7410916-B2 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | APPLIED MATERIALS, INC. (US) | 2008-08-12 | — | — | US | claimed |
| US-7297376-B1 | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers | APPLIED MATERIALS, INC. (US) | 2007-11-20 | — | — | US | claimed |
| US-7205224-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2007-04-17 | — | — | US | claimed |
| US-7094710-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS (US) | 2006-08-22 | — | — | US | claimed |
| US-20050153574-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2005-07-14 | — | — | US | claimed |
| US-20050136240-A1 | Very low dielectric constant plasma-enhanced CVD films | MANDAL ROBERT P (US) | 2005-06-23 | — | — | US | claimed |
| US-6890639-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2005-05-10 | — | — | US | claimed |
| US-6596627-B2 | Reacting an organosilicon compound and a non-silicon compound comprising a cyclic ring at conditions sufficient to retain the ring in an intermediate dielectric layer, and converting it to a dispersed void. | APPLIED MATERIALS INC. | 2003-07-22 | — | — | US | claimed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | claimed |
| US-20020197849-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-12-26 | — | — | US | claimed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | claimed |