⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5819879 | 0.84 | — | — | |
| SCHEMBL1484190 | 0.82 | — | — | |
| SCHEMBL1463126 | 0.82 | — | — | |
| SCHEMBL7602533 | 0.82 | — | — | |
| SCHEMBL2409742 | 0.82 | — | — | |
| SCHEMBL8975229 | 0.82 | — | — | |
| SCHEMBL8163818 | 0.82 | — | — | |
| SCHEMBL1654607 | 0.82 | — | — | |
| SCHEMBL9311539 | 0.80 | TSHR (0.42) | — | |
| SCHEMBL6907097 | 0.80 | TSHR (0.42) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8349746-B2 | Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure | APPLIED MATERIALS, INC. (US) | 2013-01-08 | — | — | US | claimed |
| WO-2012064491-A2 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2012-05-18 | — | — | WO | claimed |
| US-20120121823-A1 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2012-05-17 | — | — | US | claimed |
| WO-2011106218-A2 | ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION | APPLIED MATERIALS, INC. (US) | 2011-09-01 | — | — | WO | claimed |
| US-20110204492-A1 | Microelectronic structure including a low K dielectric and a method of controlling carbon distribution in the structure | APPLIED MATERIALS, INC. | 2011-08-25 | — | — | US | claimed |
| US-20110206857-A1 | ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION | APPLIED MATERIALS, INC. (US) | 2011-08-25 | — | — | US | claimed |
| US-7947611-B2 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | APPLIED MATERIALS, INC. (US) | 2011-05-24 | — | — | US | claimed |
| US-20080280457-A1 | METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER | APPLIED MATERIALS, INC. | 2008-11-13 | — | — | US | claimed |
| US-7422774-B2 | Method for forming ultra low k films using electron beam | APPLIED MATERIALS, INC. (US) | 2008-09-09 | — | — | US | claimed |
| US-7410916-B2 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter | APPLIED MATERIALS, INC. (US) | 2008-08-12 | — | — | US | claimed |
| US-20080119058-A1 | METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER | APPLIED MATERIALS, INC. | 2008-05-22 | — | — | US | claimed |
| US-7297376-B1 | Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers | APPLIED MATERIALS, INC. (US) | 2007-11-20 | — | — | US | claimed |
| US-20050153073-A1 | Method for forming ultra low k films using electron beam | APPLIED MATERIALS, INC. | 2005-07-14 | — | — | US | claimed |
| US-20260040847-A1 | INERT RADICAL ASSISTED CVD LOW K FILM DEPOSITION | APPLIED MATERIALS INC (US) | 2026-02-05 | — | — | US | disclosed |
| US-20260031306-A1 | SEMICONDUCTOR WAFER PROCESSING WITH ELECTROMAGNETIC PLASMA CONFINEMENT | APPLIED MATERIALS INC (US) | 2026-01-29 | — | — | US | disclosed |
| US-20260018409-A1 | POST TREATMENT PROCESSES | APPLIED MATERIALS INC (US) | 2026-01-15 | — | — | US | disclosed |
| WO-2003005438-A2 | IMPROVED METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION (US) | 2003-01-16 | — | — | WO | disclosed |
| US-20030001282-A1 | METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION | 2003-01-02 | — | — | US | disclosed |
| US-20020173172-A1 | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant | DOW CORNING CORPORATION | 2002-11-21 | — | — | US | disclosed |
| WO-2002077320-A1 | METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS | DOW CORNING CORPORATION (US) | 2002-10-03 | — | — | WO | disclosed |