SCHEMBL18897989

SCHEMBL18897989

CC(C)(C)CC(C)(C(=O)OC1C2CC3C1OC(=O)C3C2C(=O)OC(C(F)(F)F)C(F)(F)F)C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22005443 0.89
SCHEMBL10203803 0.88
SCHEMBL19976009 0.87
SCHEMBL19901526 0.87
SCHEMBL16065405 0.85 HMGCR (0.35)
SCHEMBL9608734 0.85 HMGCR (0.35)
SCHEMBL22741449 0.85
SCHEMBL18698637 0.82
SCHEMBL12058777 0.81
SCHEMBL11991322 0.80 HMGCR (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-11687000-B2 Sulfonium compound, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-27 US disclosed
US-20230134822-A1 AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20210157241-A1 MANUFACTURING METHOD OF SEMICONDUCTOR CHIP, AND KIT FUJIFILM CORPORATION (JP) 2021-05-27 US disclosed
US-20200319550-A1 SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-08 US disclosed
US-10754248-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-25 US disclosed
US-10248022-B2 Sulfonium compound, making method, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-04-02 US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 US disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20170315442-A1 NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-02 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed