Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 6/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.30 |
| ▸ | USP2 | O75604 | 2/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.30 |
| ▸ | TSHR | P16473 | 2/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.30 |
| ▸ | PGR | P06401 | 1/20 | 0.30 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.30 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.30 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.30 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.30 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.30 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.30 |
| ▸ | DRD1 | P21728 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16065405 | 1.00 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL15216262 | 0.93 | HMGCR (0.31) | HMGCR | |
| SCHEMBL9924520 | 0.91 | HMGCR (0.34) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL22741449 | 0.91 | — | — | |
| SCHEMBL10203803 | 0.90 | — | — | |
| SCHEMBL19901526 | 0.90 | — | — | |
| SCHEMBL19976009 | 0.88 | — | — | |
| SCHEMBL47482 | 0.86 | HMGCR (0.37) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL19396605 | 0.86 | HMGCR (0.31) | HMGCR | |
| SCHEMBL22005443 | 0.85 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 232 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914300-B2 | Manufacturing method of semiconductor chip, and kit | FUJIFILM CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20100266957-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
| US-20100239978-A1 | PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100136486-A1 | RESIST PROTECTIVE COATING COMPOSITON AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100136482-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100112482-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-06 | — | — | US | disclosed |
| US-20100028804-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100015554-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-01-21 | — | — | US | disclosed |
| US-7537880-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-26 | — | — | US | disclosed |
| US-20080118860-A1 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | RER1, NOC2L, RAD51 | HMGCR 3773/4885CYP3A4 4815/4885USP2 2871/4885 |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | HMGCR 1183/4885CYP3A4 4731/4885USP2 4346/4885 |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | HMGCR 3630/4885CYP3A4 4764/4885USP2 4016/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | HMGCR 3073/4885CYP3A4 4136/4885USP2 4347/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | HMGCR 4536/4885CYP3A4 2747/4885USP2 3522/4885 |
| US-20100112482-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | ZYX, FOXO1, CAPZA1 | HMGCR 2465/4885CYP3A4 3937/4885USP2 2222/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | HMGCR 2809/4885CYP3A4 3203/4885USP2 2701/4885 |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GFER, GNMT, DNER | HMGCR 2068/4885CYP3A4 1206/4885USP2 3976/4885 |
| US-11693314-B2 | Resist composition and patterning process | EIF2B1, EIF2B5, EIF2B3 | HMGCR 2809/4885CYP3A4 3203/4885USP2 2701/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.