SCHEMBL1897335

SCHEMBL1897335

C=Cc1ccccc1C(=O)O[Si](C)(C)C

nearest known ligand 0.40

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.40
TSHR P16473 6/20 0.35
ALDH1A1 P00352 7/20 0.35
HSD17B10 Q99714 3/20 0.35
BACE1 P56817 1/20 0.35
LMNA P02545 3/20 0.34
CYP1A2 P05177 1/20 0.34
CYP2C19 P33261 1/20 0.34
CFTR P13569 1/20 0.33
NR1H4 Q96RI1 1/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
HPGD P15428 1/20 0.33
HTT P42858 1/20 0.33
KDM4E B2RXH2 2/20 0.33
POLB P06746 1/20 0.33
ATM Q13315 1/20 0.33
AR P10275 1/20 0.32
MAOB P27338 1/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1898784 0.84 CYP3A4 (0.36) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL1896100 0.82 CYP3A4 (0.40) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL16004864 0.81 TSHR (0.50) CYP3A4TSHRALDH1A1HSD17B10LMNA
SCHEMBL61520 0.80 TSHR (0.55) TSHRALDH1A1HSD17B10BACE1LMNA
SCHEMBL1223272 0.80 CYP3A4 (0.46) CYP3A4TSHRALDH1A1HSD17B10BACE1
Potassium SCHEMBL30901224 0.79 TSHR (0.48) CYP3A4TSHRALDH1A1HSD17B10LMNA
SCHEMBL10539745 0.78 CYP3A4 (0.44) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL8840180 0.77 CYP3A4 (0.41) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL23404252 0.77 CYP3A4 (0.47) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL30242196 0.77 CYP3A4 (0.47) CYP3A4TSHRALDH1A1HSD17B10BACE1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed