SCHEMBL1896100

SCHEMBL1896100

C=Cc1ccccc1C(=O)O[Si](CC)(CC)CC

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.40
TSHR P16473 7/20 0.40
ALDH1A1 P00352 6/20 0.38
TDP1 Q9NUW8 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
HSD17B10 Q99714 2/20 0.36
BACE1 P56817 1/20 0.35
TP53 P04637 1/20 0.35
MAPK1 P28482 1/20 0.35
LMNA P02545 3/20 0.34
KDM4E B2RXH2 3/20 0.34
MEN1 O00255 1/20 0.33
PLIN1 O60240 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
PLIN5 Q00G26 1/20 0.33
KMT2A Q03164 1/20 0.33
ABHD5 Q8WTS1 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2C19 P33261 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1897335 0.82 CYP3A4 (0.40) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL30385424 0.79 TSHR (0.67) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL2002577 0.79 TSHR (0.67) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL1898784 0.77 CYP3A4 (0.36) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL8840180 0.77 CYP3A4 (0.41) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL61520 0.76 TSHR (0.55) TSHRALDH1A1HSD17B10BACE1LMNA
SCHEMBL4905609 0.76 ALDH1A1 (0.69) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL1223272 0.76 CYP3A4 (0.46) CYP3A4TSHRALDH1A1HSD17B10BACE1
SCHEMBL10897246 0.75 CYP3A4 (0.40) CYP3A4TSHRALDH1A1TDP1L3MBTL1
SCHEMBL10539745 0.74 CYP3A4 (0.44) CYP3A4TSHRALDH1A1HSD17B10BACE1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed