SCHEMBL1900897

SCHEMBL1900897

C=Cc1ccccc1C(=O)OC1CCCO1

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 4/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
ALDH1A1 P00352 4/20 0.36
HSD17B10 Q99714 3/20 0.36
HPGD P15428 2/20 0.36
TDP1 Q9NUW8 1/20 0.35
GAA P10253 1/20 0.34
POLB P06746 1/20 0.34
TSHR P16473 1/20 0.34
MEN1 O00255 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
KMT2A Q03164 1/20 0.34
ALOX15 P16050 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
STS P08842 1/20 0.33
CYP3A4 P08684 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1397227 0.96 KDM4E (0.36) KDM4ESMN1; SMN2ALDH1A1HSD17B10HPGD
SCHEMBL27834864 0.82 PTPN1 (0.37) KDM4ESMN1; SMN2ALDH1A1HSD17B10HPGD
SCHEMBL8763246 0.81 MEN1 (0.44) KDM4ESMN1; SMN2ALDH1A1HSD17B10HPGD
SCHEMBL26645483 0.80 BCHE (0.47) KDM4ESMN1; SMN2ALDH1A1HSD17B10HPGD
SCHEMBL2574276 0.77 KDM4E (0.40) KDM4ESMN1; SMN2ALDH1A1HSD17B10TDP1
SCHEMBL3363106 0.77 MEN1 (0.48) KDM4ESMN1; SMN2ALDH1A1HSD17B10TDP1
SCHEMBL1397211 0.75 PTPN1 (0.35) KDM4EALDH1A1MEN1KMT2A
SCHEMBL11061705 0.75 SLC18A3 (0.48) HPGDGAAMEN1KMT2A
SCHEMBL14527850 0.75 NPC1 (0.39) SMN1; SMN2ALDH1A1HSD17B10HPGDPOLB
SCHEMBL21891524 0.74 SMN1; SMN2 (0.43) KDM4ESMN1; SMN2ALDH1A1HSD17B10HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed