⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16519774 | 1.00 | — | — | |
| SCHEMBL690677 | 0.79 | — | — | |
| SCHEMBL27824858 | 0.79 | — | — | |
| SCHEMBL14395906 | 0.79 | — | — | |
| SCHEMBL3401569 | 0.74 | — | — | |
| SCHEMBL1287804 | 0.74 | — | — | |
| SCHEMBL7614582 | 0.74 | — | — | |
| SCHEMBL3401573 | 0.74 | — | — | |
| SCHEMBL1287802 | 0.74 | — | — | |
| SCHEMBL711278 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260133485-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2026-05-14 | — | — | US | disclosed |
| US-20260093180-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION | JSR CORPORATION (JP) | 2026-04-02 | — | — | US | disclosed |
| EP-4606882-A1 | CLEANING SOLUTION, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR FORMING METAL-CONTAINING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-08-27 | — | — | EP | disclosed |
| US-20250263639-A1 | Cleaning Solution, Method For Cleaning Substrate, And Method For Forming Metal Containing Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-08-21 | — | — | US | disclosed |
| EP-4600734-A1 | PATTERN FORMING METHOD AND LAMINATE | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-08-13 | — | — | EP | disclosed |
| US-20250246429-A1 | Pattern Forming Method And Laminate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-31 | — | — | US | disclosed |
| WO-2025079496-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR株式会社 | 2025-04-17 | — | — | WO | disclosed |
| CN-119678105-A | Method for producing semiconductor substrate and composition for film formation | JSR株式会社 | 2025-03-21 | — | — | CN | disclosed |
| WO-2025041533-A1 | SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION | JSR株式会社 | 2025-02-27 | — | — | WO | disclosed |
| WO-2025013817-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND UNDERLAYER FILM-FORMING COMPOSITION FOR FIRST METAL-CONTAINING RESIST | JSR株式会社 | 2025-01-16 | — | — | WO | disclosed |
| US-20190094689-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-03-28 | — | — | US | disclosed |
| US-20190094691-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-03-28 | — | — | US | disclosed |
| US-20190033713-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-01-31 | — | — | US | disclosed |
| US-20180356725-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2018-12-13 | — | — | US | disclosed |
| US-10120277-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2018-11-06 | — | — | US | disclosed |
| US-10108088-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2018-10-23 | — | — | US | disclosed |
| EP-3244262-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD | JSR Corporation (JP) | 2017-11-15 | — | — | EP | disclosed |
| US-20170299962-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-10-19 | — | — | US | disclosed |
| US-20170242337-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170242336-A1 | RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |