SCHEMBL19253567

SCHEMBL19253567

N#CC(C#N)(C#N)C(C#N)(C#N)C#N

nearest known ligand 0.42

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.42
TSHR P16473 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL28750808 0.62 ALDH1A1 (0.42) ALDH1A1TSHR
Ammonia Solution, Strong SCHEMBL27875301 0.59 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL28393316 0.59
SCHEMBL28293272 0.59 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL459761 0.59
SCHEMBL2307947 0.59
SCHEMBL100297 0.59
SCHEMBL5606066 0.59
SCHEMBL11882802 0.59
SCHEMBL47739 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117967172-A Steel-clad aluminum for suspended door 佛山市勇创门业科技有限公司 2024-05-03 CN claimed
CN-116240418-A Method for improving modification effect of A356 alloy 昆明冶金研究院有限公司 2023-06-09 CN claimed
CN-116240417-A Method for improving performance of cast aluminum-silicon alloy 昆明冶金研究院有限公司 2023-06-09 CN claimed
CN-117967172-A Steel-clad aluminum for suspended door 佛山市勇创门业科技有限公司 2024-05-03 CN disclosed
CN-116287836-A Composite refinement modifier for casting aluminum-silicon alloy and application thereof 昆明冶金研究院有限公司 2023-06-23 CN disclosed
CN-116240418-A Method for improving modification effect of A356 alloy 昆明冶金研究院有限公司 2023-06-09 CN disclosed
CN-116240417-A Method for improving performance of cast aluminum-silicon alloy 昆明冶金研究院有限公司 2023-06-09 CN disclosed
US-10087541-B2 Method of forming a dielectric through electrodeposition on an electrode for a capacitor UNIVERSITY OF TARTU (EE) 2018-10-02 US disclosed
US-20170241036-A1 Method of Forming a Dielectric Through Electrodeposition on an Electrode For a Capacitor UNIVERSITY OF TARTU (EE) 2017-08-24 US disclosed