SCHEMBL19261082

SCHEMBL19261082

C[C@H]1C2OC(=O)C3C2CC1[C@@H]3CC[C@@H]1C2CC3C1OC(=O)[C@]3(C)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18845242 1.00 — —
SCHEMBL24777658 1.00 — —
SCHEMBL19901525 1.00 — —
SCHEMBL22507483 0.91 — —
SCHEMBL18845023 0.91 — —
SCHEMBL19849943 0.91 — —
SCHEMBL18845397 0.91 — —
SCHEMBL14488917 0.75 PRKCA (0.33) —
SCHEMBL13586953 0.75 PRKCA (0.33) —
SCHEMBL16743494 0.72 MAPT (0.31) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-11560355-B2 Onium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-24 — — US disclosed
US-20200223796-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-16 — — US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
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