SCHEMBL196617

SCHEMBL196617

[Bi].[Sn].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3789059 0.87
SCHEMBL1508939 0.87
SCHEMBL8399996 0.87
SCHEMBL31119465 0.87
SCHEMBL30713445 0.82
SCHEMBL29351179 0.82
SCHEMBL29466064 0.82
SCHEMBL29371177 0.82
SCHEMBL29352049 0.82
SCHEMBL30142614 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 718 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12484348-B2 Substrate, method for forming the same, display device and for forming the same Beijing Boe Technology Development Co., Ltd. (CN) 2025-11-25 US claimed
CN-119286475-A Preparation method of graphene reinforced low-melting-point metal phase-change composite material 北京科技大学 2025-01-10 CN claimed
CN-112217492-B SAW filter 北京梦之墨科技有限公司 2024-11-22 CN claimed
CN-118895109-A Thermal interface material and preparation method thereof 深圳先进电子材料国际创新研究院 2024-11-05 CN claimed
CN-109216286-B Semiconductor device with a semiconductor device having a plurality of semiconductor chips 富士电机株式会社 2023-09-19 CN claimed
CN-116646486-A Inert lithium powder, preparation method thereof, lithium ion battery electrode material containing inert lithium powder and lithium ion battery 深圳市研一新材料有限责任公司 2023-08-25 CN claimed
CN-116581294-A Inert lithium powder and preparation method thereof, lithium ion battery electrode material and lithium ion battery 深圳市研一新材料有限责任公司 2023-08-11 CN claimed
US-20230006107-A1 SUBSTRATE, METHOD FOR FORMING THE SAME, DISPLAY DEVICE AND FOR FORMING THE SAME Beijing Boe Technology Development Co., Ltd. (CN) 2023-01-05 US claimed
CN-114974656-A Nano composite low-temperature slurry, preparation method and application thereof 深圳市百柔新材料技术有限公司 2022-08-30 CN claimed
CN-114864134-A Nano-alloy composite low-temperature slurry, preparation method and application thereof 深圳市百柔新材料技术有限公司 2022-08-05 CN claimed
CN-1738039-A Semiconductor device and manufacturing method of the same TOKYO SHIBAURA ELECTRIC CO (JP) 2006-02-22 CN claimed
US-20060033214-A1 Semiconductor device and manufacturing method of the same KABUSHIKI KAISHA TOSHIBA 2006-02-16 US claimed
US-20050194695-A1 Method of assembling chips QUALCOMM INCORPORATED 2005-09-08 US claimed
EP-1038628-B1 UNLEADED SOLDER POWDER AND PRODUCTION METHOD THEREFOR MITSUI MINING & SMELTING CO (JP) 2005-05-04 EP claimed
US-20040126927-A1 Method of assembling chips QUALCOMM INCORPORATED 2004-07-01 US claimed
US-20030189260-A1 FLIP-CHIP BONDING STRUCTURE AND METHOD THEREOF ADVANCED SEMICONDUCTOR ENGINEERING, INC. (TW) 2003-10-09 US claimed
CN-1105619-C Unleaded solder powder and production method therefor MITSUI MINING & SMELTING CO (JP) 2003-04-16 CN claimed
US-6334905-B1 Unleaded solder powder and production method therefor MITSUI MINING AND SMELTING COMPANY, LTD. (JP) 2002-01-01 US claimed
CN-1286655-A Unleaded solder powder and production method therefor MITSUI MINING & SMELTING CO (JP) 2001-03-07 CN claimed
EP-1038628-A1 UNLEADED SOLDER POWDER AND PRODUCTION METHOD THEREFOR Mitsui Mining & Smelting Co., Ltd. (JP) 2000-09-27 EP claimed