SCHEMBL19678491

SCHEMBL19678491

O=C(OC1C2CC3C1OS(=O)(=O)C3C2C(=O)O)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22789907 0.85 — —
SCHEMBL19756185 0.83 — —
SCHEMBL26807643 0.81 — —
SCHEMBL26426959 0.80 — —
SCHEMBL22097589 0.80 — —
SCHEMBL19678512 0.78 — —
SCHEMBL26343828 0.78 — —
SCHEMBL26807879 0.73 — —
SCHEMBL22374241 0.73 — —
SCHEMBL26426987 0.72 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 — — US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 — — US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 — — US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 — — US disclosed
US-20220299875-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND METHOD FOR FORMING PATTERN JSR CORPORATION (JP) 2022-09-22 — — US disclosed
US-20220026803-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-27 — — US disclosed
US-11204553-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-12-21 — — US disclosed
US-20200050104-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-02-13 — — US disclosed
US-10295904-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-05-21 — — US disclosed
US-20180088463-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 — — US disclosed
US-20180081267-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 — — US disclosed
US-20180081267-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed
US-20170351177-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-07 — — US disclosed
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