SCHEMBL19756185

SCHEMBL19756185

O=C(OC1C2CC3C1OS(=O)(=O)C3C2C(=O)OCCS(=O)(=O)O)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19756188 0.84 — —
SCHEMBL19678491 0.83 — —
SCHEMBL19756037 0.82 — —
SCHEMBL19756184 0.82 — —
SCHEMBL19756181 0.80 — —
SCHEMBL22789907 0.80 — —
SCHEMBL25476384 0.79 — —
SCHEMBL26807643 0.77 — —
SCHEMBL19756191 0.76 HDAC3 (0.32) —
SCHEMBL26312812 0.76 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-10613437-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-07 — — US disclosed
US-20170369616-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-28 — — US disclosed
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