SCHEMBL19756187

SCHEMBL19756187

O=C(OC1CC2CC(C(=O)OCCS(=O)(=O)O)C1C2)c1cc(I)cc(I)c1I

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21911814 0.84 — —
SCHEMBL19756191 0.82 HDAC3 (0.32) —
SCHEMBL19756035 0.80 — —
SCHEMBL19678486 0.80 — —
SCHEMBL19756192 0.79 HDAC3 (0.33) —
SCHEMBL22097479 0.77 SCN9A (0.33) —
SCHEMBL21911813 0.76 HDAC3 (0.30) —
SCHEMBL19756059 0.76 HDAC3 (0.38) —
SCHEMBL25476380 0.76 — —
SCHEMBL19756182 0.75 SERPINE1 (0.32) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 — — US disclosed
US-10613437-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-07 — — US disclosed
US-20170369616-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-28 — — US disclosed
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