Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 6/20 | 0.68 |
| ▸ | KDM1A | O60341 | 1/20 | 0.49 |
| ▸ | MAPT | P10636 | 3/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | CA2 | P00918 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 3/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.40 |
| ▸ | ESR1 | P03372 | 1/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.40 |
| ▸ | AR | P10275 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.40 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.40 |
| ▸ | HTR6 | P50406 | 1/20 | 0.40 |
| ▸ | ESRRG | P62508 | 1/20 | 0.40 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.40 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13866881 | 0.95 | ELANE (0.62) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL5561643 | 0.95 | ELANE (0.62) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL12604846 | 0.93 | ELANE (0.60) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL16977195 | 0.93 | ELANE (0.60) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL14437649 | 0.93 | ELANE (0.65) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL26214955 | 0.93 | ELANE (0.60) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL22418303 | 0.90 | ELANE (0.57) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL13845187 | 0.90 | ELANE (0.57) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL4061370 | 0.90 | ELANE (0.81) | ELANEKDM1AMAPTTDP1L3MBTL1 | |
| SCHEMBL14388569 | 0.89 | ELANE (0.59) | ELANEKDM1AMAPTTDP1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 317 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1308782-B1 | Chemically amplified positive resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-09-05 | — | — | EP | claimed |
| US-6660447-B2 | Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-09 | — | — | US | claimed |
| JP-4269756-A | — | — | None | — | — | JP | disclosed |
| JP-4269757-A | — | — | None | — | — | JP | disclosed |
| EP-2955576-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-07-22 | — | — | EP | disclosed |
| US-9519217-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| EP-2955576-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-12-16 | — | — | EP | disclosed |
| US-20150355543-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2033966-B1 | Novel photoacid generators, resist compositons, and patterning processes | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8980525-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| EP-0708368-A1 | Positive-working photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 1996-04-24 | — | — | EP | disclosed |
| EP-0691674-A2 | Method of forming micropatterns | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1996-01-10 | — | — | EP | disclosed |
| EP-0675410-A1 | Resist composition for deep ultraviolet light | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1995-10-04 | — | — | EP | disclosed |
| US-5403695-A | Photolithography; high resolution; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 1995-04-04 | — | — | US | disclosed |
| US-5352564-A | Copolymer of styrene derivatives, an acid release agent and a dissolution inhibitor containing an unstable acid group | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1994-10-04 | — | — | US | disclosed |
| US-5326675-A | Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-07-05 | — | — | US | disclosed |
| EP-0595361-A2 | Method of forming micropatterns | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1994-05-04 | — | — | EP | disclosed |
| JP-H04269757-A | FORMATION OF RESIST PATTERN | NIPPON TELEGR & TELEPH CORP <NTT> | 1992-09-25 | — | — | JP | disclosed |
| JP-H04269756-A | RESIST FILM SUITABLE FOR LIFT-OFF WORKING | NIPPON TELEGR & TELEPH CORP <NTT> | 1992-09-25 | — | — | JP | disclosed |