SCHEMBL199343

SCHEMBL199343

O=NOS(=O)(=O)O.[Ru]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28950 0.97
SCHEMBL28188291 0.93
SCHEMBL9309058 0.93
SCHEMBL9438163 0.93
SCHEMBL9113124 0.93
Sulfuric Acid SCHEMBL3390874 0.93 CA5A (0.40)
SCHEMBL27541517 0.93
Ammonia Solution, Strong SCHEMBL6544918 0.93
Hydrochloric Acid SCHEMBL28213776 0.90
Nitrogen SCHEMBL27953045 0.90

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118080013-A Double-atom catalyst loaded by metal organic framework material and preparation and application thereof 中国科学院大连化学物理研究所 2024-05-28 CN claimed
CN-115787010-A Black ruthenium plating solution and application thereof in preparation of pseudo-classic gold or platinum and other ornaments 周大福珠宝文化产业园(武汉)有限公司 2023-03-14 CN claimed
CN-111032911-B Selective electroless electrochemical atomic layer deposition in aqueous solution without external voltage bias 朗姆研究公司 2023-03-14 CN claimed
US-10640874-B2 Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias LAM RESEARCH CORPORATION (US) 2020-05-05 US claimed
CN-111032911-A Selective electroless electrochemical atomic layer deposition in aqueous solution without external voltage bias 朗姆研究公司 2020-04-17 CN claimed
US-20190048472-A1 SELECTIVE ELECTROLESS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION IN AN AQUEOUS SOLUTION WITHOUT EXTERNAL VOLTAGE BIAS LAM RESEARCH CORPORATION 2019-02-14 US claimed
CN-104450864-A Composition and application thereof SINOCARE INC 2015-03-25 CN claimed
JP-2006518665-A 2006-08-17 JP claimed
US-20060073966-A1 Electrocatalysts and processes for producing E. I. DU PONT DE NEMOURS AND COMPANY 2006-04-06 US claimed
WO-2004073090-A2 ELECTROCATALYSTS AND PROCESSES FOR PRODUCING E.I. DU PONT DE NEMOURS AND COMPANY (US) 2004-08-26 WO claimed
CN-115787010-B Black ruthenium plating solution and application thereof in preparation of antique gold or platinum ornaments 周大福珠宝文化产业园(武汉)有限公司 2024-11-12 CN disclosed
CN-118080013-A Double-atom catalyst loaded by metal organic framework material and preparation and application thereof 中国科学院大连化学物理研究所 2024-05-28 CN disclosed
CN-115787010-A Black ruthenium plating solution and application thereof in preparation of pseudo-classic gold or platinum and other ornaments 周大福珠宝文化产业园(武汉)有限公司 2023-03-14 CN disclosed
CN-111032911-B Selective electroless electrochemical atomic layer deposition in aqueous solution without external voltage bias 朗姆研究公司 2023-03-14 CN disclosed
US-10640874-B2 Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias LAM RESEARCH CORPORATION (US) 2020-05-05 US disclosed
EP-1846947-A1 GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THROUGH-GATE-DIELECTRIC CURRENT FLOW International Business Machines Corporation (US) 2007-10-24 EP disclosed
WO-2007112361-A2 STRUCTURE AND METHOD OF FORMING ELECTRODEPOSITED CONTACTS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-10-04 WO disclosed
US-20070222066-A1 STRUCTURE AND METHOD OF FORMING ELECTRODEPOSITED CONTACTS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-09-27 US disclosed
WO-2006080980-A1 GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THROUGH-GATE-DIELECTRIC CURRENT FLOW INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-08-03 WO disclosed
US-20060166474-A1 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-07-27 US disclosed