⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30057778 | 1.00 | — | — | |
| SCHEMBL29409497 | 1.00 | — | — | |
| SCHEMBL30516525 | 0.87 | — | — | |
| SCHEMBL31734810 | 0.87 | — | — | |
| SCHEMBL2239554 | 0.87 | — | — | |
| Lithium Ion SCHEMBL23148245 | 0.87 | — | — | |
| SCHEMBL30547912 | 0.87 | — | — | |
| SCHEMBL18978706 | 0.87 | — | — | |
| SCHEMBL31244200 | 0.87 | — | — | |
| SCHEMBL93246 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 199 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260068548-A1 | RESISTIVE SWITCHING STRUCTURE TO IMPROVE RRAM | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-05 | — | — | US | claimed |
| CN-119661090-A | Coated glass, laminated glass and manufacturing method | 江苏繁华应材科技股份有限公司 | 2025-03-21 | — | — | CN | claimed |
| US-20240402420-A1 | PHOTONIC TRANSMISSION STRUCTURE | WELLS FARGO BANK, NATIONAL ASSOCIATION, AS AGENT | 2024-12-05 | — | — | US | claimed |
| EP-4471472-A1 | PHOTONIC TRANSMISSION STRUCTURE | Viavi Solutions Inc. (US) | 2024-12-04 | — | — | EP | claimed |
| CN-119065055-A | Photon transmission structure | VIAVI科技有限公司 | 2024-12-03 | — | — | CN | claimed |
| CN-114551105-B | Manufacturing method of negative foil for aluminum electrolytic capacitor | 丰宾电子科技股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-114272920-B | Composite oxide coating electrode for degrading organic pollutants and preparation method thereof | 广东省科学院资源利用与稀土开发研究所 | 2023-10-03 | — | — | CN | claimed |
| WO-2023088398-A1 | COMPOSITE OXIDE COATING ELECTRODE FOR ORGANIC POLLUTANT DEGRADATION, AND PREPARATION METHOD THEREFOR | 广东省科学院资源利用与稀土开发研究所 | 2023-05-25 | — | — | WO | claimed |
| US-20230071080-A1 | ELECTRODE COMPOSITIONS | NYOBOLT LIMITED (GB) | 2023-03-09 | — | — | US | claimed |
| EP-4046216-A1 | ELECTRODE COMPOSITIONS | Nyobolt Limited (GB) | 2022-08-24 | — | — | EP | claimed |
| CN-102598158-A | Method for producing laminated film | SUMITOMO CHEMICAL CO | 2012-07-18 | — | — | CN | claimed |
| US-20080308833-A1 | Group III nitride-based compound semiconductor light-emitting device | TOYODA GOSEI CO., LTD. (JP) | 2008-12-18 | — | — | US | claimed |
| US-7201943-B2 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-04-10 | — | — | US | claimed |
| US-7193294-B2 | Semiconductor substrate comprising a support substrate which comprises a gettering site | TOSHIBA CERAMICS CO., LTD. (JP) | 2007-03-20 | — | — | US | claimed |
| US-20070040207-A1 | Electronic devices including dielectric layers with different densities of titanium | NAM GAB-JIN | 2007-02-22 | — | — | US | claimed |
| US-7144771-B2 | Methods of forming electronic devices including dielectric layers with different densities of titanium | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-12-05 | — | — | US | claimed |
| US-20060118868-A1 | A semiconductor substrate comprising a support substrate which comprises a gettering site | TOSHIBA CERAMICS CO., LTD. | 2006-06-08 | — | — | US | claimed |
| US-20040075130-A1 | Methods of forming electronic devices including dielectric layers with different densities of titanium and related structures | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-04-22 | — | — | US | claimed |
| US-20040018307-A1 | Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-01-29 | — | — | US | claimed |
| US-6225185-B1 | Method for fabricating semiconductor memory having good electrical characteristics and high reliability | SHARP KABUSHIKI KAISHA (JP) | 2001-05-01 | — | — | US | claimed |