SCHEMBL2239554

SCHEMBL2239554

[Hf+4].[Hf+4].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5].[Ti+4].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31734810 1.00
SCHEMBL30516525 1.00
SCHEMBL1997121 0.87
SCHEMBL30057778 0.87
SCHEMBL35842 0.87
SCHEMBL241188 0.87
SCHEMBL29409497 0.87
SCHEMBL29353810 0.87
Lithium Ion SCHEMBL23148245 0.75
SCHEMBL18815477 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20130224916-A1 HAFNIUM TANTALUM TITANIUM OXIDE FILMS MICRON TECHNOLOGY, INC. (US) 2013-08-29 US claimed
US-8405167-B2 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. (US) 2013-03-26 US claimed
US-7999334-B2 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. (US) 2011-08-16 US claimed
US-20100006918-A1 HAFNIUM TANTALUM TITANIUM OXIDE FILMS MICRON SEMICONDUCTOR PRODUCTS, INC. 2010-01-14 US claimed
US-7592251-B2 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. (US) 2009-09-22 US claimed
US-20070134942-A1 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. 2007-06-14 US claimed
US-20260150429-A1 IMAGE-SENSOR STRUCTURE AND METHOD OF MAKING THEREOF TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-28 US disclosed
US-12557423-B2 Image-sensor structure and method of making thereof TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-17 US disclosed
US-20260026126-A1 IMAGE-SENSOR STRUCTURE AND METHOD OF MAKING THEREOF TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-01-22 US disclosed
US-20250366191-A1 SEMICONDUCTOR ISOLATION STRUCTURE FOR INJECTION SUPPRESSION AND METHOD OF MAKING THEREOF TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-27 US disclosed
US-11094801-B2 Oxide isolated fin-type field-effect transistors INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2021-08-17 US disclosed
US-20200243670-A1 OXIDE ISOLATED FIN-TYPE FIELD-EFFECT TRANSISTORS INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-07-30 US disclosed
US-10680083-B2 Oxide isolated fin-type field-effect transistors INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-06-09 US disclosed
US-7592251-B2 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. (US) 2009-09-22 US disclosed
US-7531399-B2 Semiconductor devices and methods with bilayer dielectrics TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2009-05-12 US disclosed
US-20080242071-A1 METHOD FOR PASSIVATING GATE DIELECTRIC FILMS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2008-10-02 US disclosed
US-20080070395-A1 SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2008-03-20 US disclosed
US-20070134942-A1 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. 2007-06-14 US disclosed
US-20070134942-A1 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. 2007-06-14 US disclosed
US-20070134942-A1 Hafnium tantalum titanium oxide films MICRON TECHNOLOGY, INC. 2007-06-14 US disclosed