⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL49558 | 0.94 | — | — | |
| SCHEMBL87723 | 0.94 | — | — | |
| SCHEMBL6233000 | 0.88 | — | — | |
| SCHEMBL4006109 | 0.88 | — | — | |
| SCHEMBL1650900 | 0.88 | — | — | |
| SCHEMBL409529 | 0.88 | — | — | |
| SCHEMBL1367445 | 0.88 | — | — | |
| SCHEMBL5668574 | 0.88 | — | — | |
| SCHEMBL1395928 | 0.88 | — | — | |
| SCHEMBL4130970 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7960793-B2 | Semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-06-14 | — | — | US | claimed |
| US-20090200616-A1 | SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-08-13 | — | — | US | claimed |
| US-20080001209-A1 | Non-volatile memory device and method of manufacturing the non-volatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-03 | — | — | US | claimed |
| CN-112750776-A | Method for manufacturing semiconductor device | 爱思开海力士有限公司 | 2021-05-04 | — | — | CN | disclosed |
| US-9093316-B2 | Semiconductor device and method of manufacturing the same | SONY CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-20140021527-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | SON JUNG-MIN (KR) | 2014-01-23 | — | — | US | disclosed |
| US-8350344-B2 | Semiconductor device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-01-08 | — | — | US | disclosed |
| US-20120231620-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | SONY CORPORATION (JP) | 2012-09-13 | — | — | US | disclosed |
| US-8203175-B2 | Semiconductor device and method of manufacturing the same | SONY CORPORATION (JP) | 2012-06-19 | — | — | US | disclosed |
| US-20110220985-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | SON JUNG-MIN | 2011-09-15 | — | — | US | disclosed |
| US-20100181547-A1 | Semiconductor device and method of manufacturing the same | SONY CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20080001209-A1 | Non-volatile memory device and method of manufacturing the non-volatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-03 | — | — | US | disclosed |