⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21847681 | 0.94 | — | — | |
| SCHEMBL49558 | 0.94 | — | — | |
| SCHEMBL1813001 | 0.88 | — | — | |
| SCHEMBL4006109 | 0.88 | — | — | |
| SCHEMBL4130970 | 0.88 | — | — | |
| SCHEMBL1367445 | 0.88 | — | — | |
| SCHEMBL1395928 | 0.88 | — | — | |
| SCHEMBL2003291 | 0.88 | — | — | |
| SCHEMBL6233000 | 0.88 | — | — | |
| SCHEMBL1650900 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 265 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240153998-A1 | SELECTIVE LOW TEMPERATURE EPITAXIAL DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2024-05-09 | — | — | US | claimed |
| US-20230415377-A1 | APPARATUS FOR PREPARATION OF SINTERED CERAMIC BODY OF LARGE DIMENSION | HERAEUS COVANTICS NORTH AMERICA LLC | 2023-12-28 | — | — | US | claimed |
| EP-4221949-A1 | APPARATUS FOR PREPARATION OF SINTERED CERAMIC BODY OF LARGE DIMENSION | Heraeus Conamic North America LLC (US) | 2023-08-09 | — | — | EP | claimed |
| EP-4221950-A2 | SINTERED CERAMIC BODY OF LARGE DIMENSION AND METHOD OF MAKING | Heraeus Conamic North America LLC (US) | 2023-08-09 | — | — | EP | claimed |
| CN-111415934-B | PMOS and NMOS integrated structure and manufacturing method thereof | 上海华力集成电路制造有限公司 | 2023-06-09 | — | — | CN | claimed |
| CN-115692199-A | Method for improving etching uniformity | 上海华力集成电路制造有限公司 | 2023-02-03 | — | — | CN | claimed |
| CN-114765108-A | Method for manufacturing semiconductor structure and semiconductor structure | 长鑫存储技术有限公司 | 2022-07-19 | — | — | CN | claimed |
| CN-109473357-B | Method for manufacturing MOS transistor | 上海华力集成电路制造有限公司 | 2022-05-27 | — | — | CN | claimed |
| WO-2022072705-A2 | SINTERED CERAMIC BODY OF LARGE DIMENSION AND METHOD OF MAKING | HERAEUS CONAMIC NORTH AMERICA LLC (US) | 2022-04-07 | — | — | WO | claimed |
| CN-108831919-B | Planar gate MOSFET | 上海华力集成电路制造有限公司 | 2021-10-15 | — | — | CN | claimed |
| US-20130344701-A1 | METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K GATE STRUCTURE | APPLIED MATERIALS, INC. | 2013-12-26 | — | — | US | claimed |
| US-8519447-B2 | Ion sensitive sensor with multilayer construction in the sensor region | Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) | 2013-08-27 | — | — | US | claimed |
| US-8461587-B2 | Ion-sensitive sensor with multilayer construction in the sensitive region | Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) | 2013-06-11 | — | — | US | claimed |
| CN-102610515-A | Methods for high temperature etching a high-k material gate structure | APPLIED MATERIALS INC | 2012-07-25 | — | — | CN | claimed |
| US-20120139011-A1 | ION SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSOR REGION | Endress +Hauser Conducta Gesellschaft fur Mess-und Regeltechnik mbH + Co. KG (DE) | 2012-06-07 | — | — | US | claimed |
| US-20120018722-A1 | ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION | ENDRESS + HAUSER CONDUCTA GESELLSCHAFT FUR MESS- UND REGELTECHNIK MBH + CO. KG (DE) | 2012-01-26 | — | — | US | claimed |
| CN-101844937-A | High-voltage electrotechnical porcelain glaze suitable to be used in severe cold regions and preparation method thereof | DALIAN INSULATOR GROUP CO LTD | 2010-09-29 | — | — | CN | claimed |
| CN-101339903-A | Method for high temperature etching of high-K material gate structures | APPLIED MATERIALS INC (US) | 2009-01-07 | — | — | CN | claimed |
| US-20090004870-A1 | METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K MATERIAL GATE STRUCTURE | APPLIED MATERIALS, INC. | 2009-01-01 | — | — | US | claimed |
| EP-2009681-A2 | Methods for high temperature etching a high-k material gate structure | Applied Materials, Inc. (US) | 2008-12-31 | — | — | EP | claimed |