⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL31257934 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL31235890 | 0.87 | — | — | |
| SCHEMBL5013345 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL3262819 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL3674611 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL3206156 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL102042 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL11114803 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL1003210 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL41750 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114481230-B | High-density hafnium carbon oxygen solid solution, preparation method thereof and method for preparing metal hafnium by electrolysis | 北京科技大学 | 2023-05-09 | — | — | CN | claimed |
| CN-114481230-A | High-density hafnium-carbon-oxygen solid solution, preparation method thereof and method for preparing metal hafnium through electrolysis | 北京科技大学 | 2022-05-13 | — | — | CN | claimed |
| CN-114481230-B | High-density hafnium carbon oxygen solid solution, preparation method thereof and method for preparing metal hafnium by electrolysis | 北京科技大学 | 2023-05-09 | — | — | CN | disclosed |
| CN-114481230-B | High-density hafnium carbon oxygen solid solution, preparation method thereof and method for preparing metal hafnium by electrolysis | 北京科技大学 | 2023-05-09 | — | — | CN | disclosed |
| CN-114481230-A | High-density hafnium-carbon-oxygen solid solution, preparation method thereof and method for preparing metal hafnium through electrolysis | 北京科技大学 | 2022-05-13 | — | — | CN | disclosed |
| CN-114481230-A | High-density hafnium-carbon-oxygen solid solution, preparation method thereof and method for preparing metal hafnium through electrolysis | 北京科技大学 | 2022-05-13 | — | — | CN | disclosed |
| CN-114481230-A | High-density hafnium-carbon-oxygen solid solution, preparation method thereof and method for preparing metal hafnium through electrolysis | 北京科技大学 | 2022-05-13 | — | — | CN | disclosed |
| US-7964515-B2 | Method of forming high-dielectric constant films for semiconductor devices | TOKYO ELECTRON LIMITED (JP) | 2011-06-21 | — | — | US | disclosed |
| US-20090163012-A1 | METHOD OF FORMING HIGH-DIELECTRIC CONSTANT FILMS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2009-06-25 | — | — | US | disclosed |