⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4836880 | 0.82 | — | — | |
| SCHEMBL31258202 | 0.82 | — | — | |
| SCHEMBL31489983 | 0.82 | — | — | |
| SCHEMBL9716108 | 0.82 | — | — | |
| SCHEMBL13268672 | 0.82 | — | — | |
| SCHEMBL29766338 | 0.82 | — | — | |
| SCHEMBL3620782 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL2004690 | 0.82 | — | — | |
| SCHEMBL6937540 | 0.82 | — | — | |
| SCHEMBL6936987 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 104 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115404545-A | Hafnium oxygen fluorine compound second-order nonlinear optical crystal material and preparation and application thereof | 同济大学 | 2022-11-29 | — | — | CN | claimed |
| CN-113929464-B | CNT/graphene covalent modified high-thermal-conductivity carbide ceramic and preparation method thereof | 航天特种材料及工艺技术研究所 | 2022-10-25 | — | — | CN | claimed |
| CN-113929464-A | CNT/graphene covalent modified high-thermal-conductivity carbide ceramic and preparation method thereof | 航天特种材料及工艺技术研究所 | 2022-01-14 | — | — | CN | claimed |
| CN-109088101-A | A kind of electrolyte and its application | 中南大学 | 2018-12-25 | — | — | CN | claimed |
| CN-107207366-A | Highly thermally conductive property silicon nitride sinter, the silicon nitride board and silicon nitride circuit substrate and semiconductor device for having used it | 株式会社东芝 | 2017-09-26 | — | — | CN | claimed |
| CN-104064572-A | Semiconductor structure and manufacturing method thereof | NANYA TECHNOLOGY CORP | 2014-09-24 | — | — | CN | claimed |
| CN-101661882-B | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MFG | 2013-07-10 | — | — | CN | claimed |
| CN-102456725-A | Monocrystal high K gate dielectric material and preparation method thereof | BEIJING NONFERROUS METAL | 2012-05-16 | — | — | CN | claimed |
| CN-101661882-A | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MFG | 2010-03-03 | — | — | CN | claimed |
| CN-1992179-A | Method for forming microelectronics structure | INTEL CORP (US) | 2007-07-04 | — | — | CN | claimed |
| CN-1949532-A | Semiconductor structure and manufacturing method thereof | INST IND TECHNOLOGY (CN) | 2007-04-18 | — | — | CN | claimed |
| CN-121517224-A | Preparation method and application of porous hafnium carbide superhigh temperature ceramic | 哈尔滨工业大学 | 2026-02-13 | — | — | CN | disclosed |
| CN-113346015-B | Memristor for realizing conductive filament channel shaping and positioning | 华中科技大学 | 2025-05-02 | — | — | CN | disclosed |
| CN-119346145-B | Preparation method and application of high-wear-resistance mesoporous FCC catalyst | 岳阳怡天化工有限公司 | 2025-03-21 | — | — | CN | disclosed |
| CN-119346145-A | Preparation method and application of high-wear-resistance mesoporous FCC catalyst | 岳阳怡天化工有限公司 | 2025-01-24 | — | — | CN | disclosed |
| CN-1227720-C | Method for manufacturing semiconductor device | ELBITA MEMORY CO LTD (JP) | 2005-11-16 | — | — | CN | disclosed |
| US-20050065358-A1 | Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same | MITSUBISHI MATERIALS CORPORATION (JP) | 2005-03-24 | — | — | US | disclosed |
| CN-1501438-A | Method for manufacturing lead straight pattern layer by silicon dioxide | �����ɷ� | 2004-06-02 | — | — | CN | disclosed |
| CN-1471143-A | Method for manufacturing semiconductor device | ���ش�洢���ɷ�����˾ | 2004-01-28 | — | — | CN | disclosed |
| CN-2063634-U | METAL-CERAMIC, W-RE COMBINED TYPE QUICK TEMP. MEASURING GUN | WU XU (CN) | 1990-10-10 | — | — | CN | disclosed |