SCHEMBL2006920

SCHEMBL2006920

CC1=NC(C)([Ru]C2(C)C=CC(C)=N2)C=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL9410186 0.63
SCHEMBL7331653 0.62
SCHEMBL25307281 0.59
SCHEMBL14658344 0.59
SCHEMBL14658314 0.59
SCHEMBL23468915 0.55
SCHEMBL24122765 0.54
SCHEMBL5147224 0.46
SCHEMBL21477482 0.45
SCHEMBL15045805 0.45

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1814892-B1 ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF PRAXAIR TECHNOLOGY INC (US) 2013-12-11 EP claimed
US-7682946-B2 flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) APPLIED MATERIALS, INC. (US) 2010-03-23 US claimed
WO-2007142690-A2 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. (US) 2007-12-13 WO claimed
EP-1814892-A2 ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF PRAXAIR TECHNOLOGY, INC. (US) 2007-08-08 EP claimed
US-20070128864-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-06-07 US claimed
US-20070077750-A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS APPLIED MATERIALS, INC. 2007-04-05 US claimed
US-20070054487-A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS APPLIED MATERIALS, INC. 2007-03-08 US claimed
WO-2006044446-A2 ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF PRAXAIR TECHNOLOGY, INC. (US) 2006-04-27 WO claimed
US-20060083857-A1 Organometallic compounds and processes for preparation thereof PRAXAIR TECHNOLOGY, INC. 2006-04-20 US claimed
WO-2024240187-A9 DEVICE, PREPARATION METHOD, AND ELECTRONIC DEVICE 华为技术有限公司 2025-03-20 WO disclosed
WO-2024240187-A1 DEVICE, PREPARATION METHOD, AND ELECTRONIC DEVICE 华为技术有限公司 2024-11-28 WO disclosed
US-9418890-B2 Method for tuning a deposition rate during an atomic layer deposition process APPLIED MATERIALS, INC. (US) 2016-08-16 US disclosed
US-9032906-B2 Apparatus and process for plasma-enhanced atomic layer deposition APPLIED MATERIALS, INC. (US) 2015-05-19 US disclosed
US-20140248772-A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS APPLIED MATERIALS, INC. (US) 2014-09-04 US disclosed
US-20070119371-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-05-31 US disclosed
US-20070119370-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-05-31 US disclosed
US-20070077750-A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS APPLIED MATERIALS, INC. 2007-04-05 US disclosed
US-20070054487-A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS APPLIED MATERIALS, INC. 2007-03-08 US disclosed
WO-2006044446-A2 ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF PRAXAIR TECHNOLOGY, INC. (US) 2006-04-27 WO disclosed
US-20060083857-A1 Organometallic compounds and processes for preparation thereof PRAXAIR TECHNOLOGY, INC. 2006-04-20 US disclosed