SCHEMBL2047899

SCHEMBL2047899

OC(F)(F)[C](F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL99135 0.77
SCHEMBL27191400 0.73
SCHEMBL28244892 0.73
SCHEMBL1141891 0.67
SCHEMBL1272332 0.64
SCHEMBL115905 0.64
SCHEMBL1271659 0.64
SCHEMBL18420104 0.64
SCHEMBL2816906 0.64
SCHEMBL404186 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US claimed
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-16 US claimed
US-8466310-B2 Process for producing α-substituted norbornanyl acrylates CENTRAL GLASS COMPANY, LIMITED (JP) 2013-06-18 US claimed
US-20110137073-A1 Process for Producing Alpha-Substituted Norbornanyl Acrylates CENTRAL GLASS COMPANY, LIMITED (JP) 2011-06-09 US claimed
US-6844134-B2 Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-01-18 US claimed
US-6800418-B2 ALLOWING DEVELOPMENT WITH CONVENTIONAL DEVELOPERS AND HAVING A HIGH TRANSMITTANCE AT A F2 EXCIMER LASER WAVELENGTH OF 157 NM, HYDROPHILICITY, ADHESION TO UNDERLAYER SAMSUNG ELECTRONICS (KR) 2004-10-05 US claimed
US-20030157430-A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. 2003-08-21 US claimed
US-20030125511-A1 Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist compositon comprising the same SUMSUNG ELECTRONICS CO., LTD. (KR) 2003-07-03 US claimed
WO-2002021216-A9 POLYMERS AND PHOTORESIST COMPOSITIONS COMPRISING ELECTRONEGATIVE GROUPS SHIPLEY CO LLC (US) 2003-04-03 WO claimed
US-20020058199-A1 Novel polymers and photoresist compositions comprising electronegative groups SHIPLEY COMPANY, L.L.C. 2002-05-16 US claimed
EP-2707776-B1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK AND RESIST PATTERN FORMING METHOD EACH USING THE COMPOSITION FUJIFILM CORP (JP) 2017-07-19 EP disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US disclosed
US-9091927-B2 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-16 US disclosed
EP-2707776-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM Corporation (JP) 2014-03-19 EP disclosed
JP-2003262960-A ELECTRON BEAM SENSITIVE RESIST COMPOSITION AND METHOD FOR MANUFACTURING STAMPER BY USING THE SAME HITACHI LTD 2003-09-19 JP disclosed
US-20030157430-A1 Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same SAMSUNG ELECTRONICS CO., LTD. 2003-08-21 US disclosed
US-20030125511-A1 Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist compositon comprising the same SUMSUNG ELECTRONICS CO., LTD. (KR) 2003-07-03 US disclosed
US-4107303-A Antihypertensive hexafluorohydroxyisopropyl benzazepines and benzazocines E. I. DU PONT DE NEMOURS AND COMPANY (US) 1978-08-15 US disclosed
US-4107303-A Antihypertensive hexafluorohydroxyisopropyl benzazepines and benzazocines E. I. DU PONT DE NEMOURS AND COMPANY (US) 1978-08-15 US disclosed